公开(公告)号：DE60025456D1

公开(公告)日：2006-04-06

申请号：DE60025456

申请日：2000-09-21

Applicant: ST MICROELECTRONICS SA

Inventor： CHANTRE ALAIN ,  MARTY MICHEL ,  BAUDRY HOMEGALPINE

IPC: H01L21/00 ,  H01L29/73 ,  H01L21/205 ,  H01L21/22 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/331 ,  H01L29/732 ,  H01L29/737

Abstract: Bipolar transistor fabrication includes a step of producing a base region (8) comprising an extrinsic base (800) and an intrinsic base, and a step of producing an emitter block having a narrower lower part located in an emitter-window above the intrinsic base. Production of the extrinsic base (800) involves dopant implantation after defining the emitter-window, on both sides at a determined distance from the lateral limits of the emitter-window, with self-alignment about the emitter-window, and before emitter block formation. An oxide block (13) is formed on an insulating layer located above the intrinsic base. The oxide block (13) has a narrower lower part (130) located in an etched hole of the insulating layer and whose dimensions correspond to those of the emitter-window, and an upper wider part (131) resting on the insulating layer. The lateral sides of the etched hole of the insulating layer are self-aligned with the lateral sides (FV) of the upper part of the oxide block. Ion implantation of the extrinsic base is formed on both sides of the upper part of the oxide block (13).