公开(公告)号：JP2001024160A

公开(公告)日：2001-01-26

申请号：JP2000175207

申请日：2000-06-12

Applicant: ST MICROELECTRONICS SA

Inventor： BERTHIOT DENIS

IPC: H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H03H7/06

Abstract: PROBLEM TO BE SOLVED: To enable a protective filtering circuit to acquire both a protective function against overcharging and a filtering function, by respectively connecting one main area to the other areas with portions of a reverse conductivity area to a reduced surface. SOLUTION: Metallization M11 is formed on the rear surface side of a P-type substrate 30 and metallization M12, M13, and M14 which are in contact with a diffusion area 31 are formed on the front surface side of the substrate 30. The diffusion area 31 contains portions 31-1 and 31-2 which are not covered with the metallization, are respectively extended between the area covered with the metallization M14 and the areas covered with the metallizations M12 and M13, and connect the metallization M14 of a main area to the metallization M12 and M13.

公开(公告)号：FR2795237B1

公开(公告)日：2003-07-11

申请号：FR9907860

申请日：1999-06-15

Applicant: ST MICROELECTRONICS SA

Inventor： BERTHIOT DENIS

IPC: H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H03H7/06 ,  H01L27/07 ,  H02H9/04

公开(公告)号：FR2795237A1

公开(公告)日：2000-12-22

申请号：FR9907860

申请日：1999-06-15

Applicant: ST MICROELECTRONICS SA

Inventor： BERTHIOT DENIS

IPC: H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H03H7/06 ,  H01L27/07 ,  H02H9/04

公开(公告)号：DE69426319D1

公开(公告)日：2000-12-28

申请号：DE69426319

申请日：1994-08-03

Applicant: ST MICROELECTRONICS SA

Inventor： BERNIER ERIC ,  BERTHIOT DENIS

IPC: H01L29/74 ,  H01L29/744 ,  H05B41/04

Abstract: The present invention relates to an amplifying gate thyristor comprising a main thyristor and an amplifying thyristor. The amplifying thyristor (GTO) is of the gate turn-on type. The main thyristor (T1) and the amplifying thyristor (GTO) are produced in such a way that the amplifying thyristor is conducting while the main thyristor is normally conducting. One application of the present invention resides in the switches associated with ballasts of fluorescent lamps fed by rectified alternating current.

公开(公告)号：DE69426319T2

公开(公告)日：2001-03-29

申请号：DE69426319

申请日：1994-08-03

Applicant: ST MICROELECTRONICS SA

Inventor： BERNIER ERIC ,  BERTHIOT DENIS

IPC: H01L29/74 ,  H01L29/744 ,  H05B41/04

Abstract: The present invention relates to an amplifying gate thyristor comprising a main thyristor and an amplifying thyristor. The amplifying thyristor (GTO) is of the gate turn-on type. The main thyristor (T1) and the amplifying thyristor (GTO) are produced in such a way that the amplifying thyristor is conducting while the main thyristor is normally conducting. One application of the present invention resides in the switches associated with ballasts of fluorescent lamps fed by rectified alternating current.