公开(公告)号：JP2000156403A

公开(公告)日：2000-06-06

申请号：JP29659399

申请日：1999-10-19

Applicant: ST MICROELECTRONICS SA

Inventor： ANCEAU CHRISTINE ,  PIERRE FABIEN ,  BONNARD OLIVIER

IPC: H01L21/76 ,  H01L21/225 ,  H01L21/761 ,  H01L21/763

Abstract: PROBLEM TO BE SOLVED: To create an effective insulation wall relatively easily, rapidly, and effectively by punching recesses being isolated mutually on a substrate from upper and lower portions to the contour of an insulation wall and filling the recesses with a material containing a conductive dopant, and performing annealing so that the conductive regions being diffused from adjacent recesses can be joined together. SOLUTION: Recesses being isolated mutually are punched in a substrate 1 according to the contour of a desirable insulation wall, are filled with a material including a second-conductive dopant, and are subjected to annealing so that a second conductive region being diffused from the adjacent recesses can be joined together. Then, a series of first recesses 20-22 and a series of second recesses 30-33 are formed from upper and lower surfaces, respectively. The recesses have a nearly rectangular section, where its larger dimension is vertical to the arrangement line of the recess and the depth is smaller than or equal to the thickness of the half of the substrate 1. When diffusion is formed from the rectangular region, a diffusion distance d1 in the direction of the long side of the rectangle is smaller than a diffusion distance d2 of a short side and an insulation wall is closed within limited diffusion time.