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公开(公告)号:JP2002305110A
公开(公告)日:2002-10-18
申请号:JP2002032034
申请日:2002-02-08
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
IPC: H01F17/00 , H01F17/02 , H01F27/36 , H01L21/822 , H01L23/522 , H01L27/04
Abstract: PROBLEM TO BE SOLVED: To provide a new integrated circuit inductance structure which can overcome the problems which are known in inductance structure. SOLUTION: This integrated circuit inductance structure includes a silicon substrate, a planar winding of a conductive track, a resistive layer which is not etched under the winding, an insulation layer between the winding and the resistive layer, and discontinuous conductive sections, individually parallel to a portion of the winding, which is the closest and electrically connected to ground and to the resistive layer.
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公开(公告)号:JP2001223116A
公开(公告)日:2001-08-17
申请号:JP2000377431
申请日:2000-12-12
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
Abstract: PROBLEM TO BE SOLVED: To provide an inductance structure which is arranged on a semiconductor substrate, including an inductance and a conductive plane interposed between the semiconductor substrate and the inductance. SOLUTION: This inductance structure is equipped with the conductive plane including several separate conductive elements and several conductive tracks, wherein each conductive track connects at least the one conductive element to a contact point M of the conductive plane, and each of the conductive tracks is arranged so that the resultant of the electromotive forces induced therein by the inductances is substantially null.
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公开(公告)号:AU8598301A
公开(公告)日:2002-02-18
申请号:AU8598301
申请日:2001-08-03
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
IPC: H01F17/00 , H01L23/522 , H01L23/64
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公开(公告)号:FR2812755A1
公开(公告)日:2002-02-08
申请号:FR0010340
申请日:2000-08-04
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
IPC: H01F17/00 , H01L23/522
Abstract: The invention concerns an integrated inductor (20), consisting of a flat winding of one or several turns (21, 22, 23) made of a conductive material above a substrate provided with at least a subjacent conductive level wherein is produced, through a contact pick-up strip (12'), at least an intersection of the winding, the width of at least one turn and/or one interval between two turns being reduced in line with said contact pick-up strip.
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公开(公告)号:FR2781099A1
公开(公告)日:2000-01-14
申请号:FR9808751
申请日:1998-07-08
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
Abstract: The quadrature oscillator comprises four identical cells each providing 90 degrees of phase shift, and the output of each cell is supplied to the input of the following cell. Each cell includes a current amplifier (Q') and a parallel resonant circuit inductive capacitance (L1,C1). A feedback arrangement is included in each cell, so that a fraction of the capacitive output current provides a 90 degree phase shift between quadrature outputs.
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公开(公告)号:DE69907324D1
公开(公告)日:2003-06-05
申请号:DE69907324
申请日:1999-07-06
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
Abstract: The quadrature oscillator comprises four identical cells each providing 90 degrees of phase shift, and the output of each cell is supplied to the input of the following cell. Each cell includes a current amplifier (Q') and a parallel resonant circuit inductive capacitance (L1,C1). A feedback arrangement is included in each cell, so that a fraction of the capacitive output current provides a 90 degree phase shift between quadrature outputs.
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公开(公告)号:FR2802700B1
公开(公告)日:2002-07-19
申请号:FR9915840
申请日:1999-12-15
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
Abstract: An inductance structure arranged on a semiconductor substrate, including an inductance and a conductive plane arranged between the inductance and the substrate. The conductive plane is formed of several separate conductive elements, the connection of which is performed by conductive tracks connecting at least one conductive element to a contact point M of the conductive plane. Each of the conductive tracks is arranged so that the resultant of the electromotive forces induced in said conductive track by the inductance is substantially null.
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公开(公告)号:DE69907324T2
公开(公告)日:2004-02-19
申请号:DE69907324
申请日:1999-07-06
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
Abstract: The quadrature oscillator comprises four identical cells each providing 90 degrees of phase shift, and the output of each cell is supplied to the input of the following cell. Each cell includes a current amplifier (Q') and a parallel resonant circuit inductive capacitance (L1,C1). A feedback arrangement is included in each cell, so that a fraction of the capacitive output current provides a 90 degree phase shift between quadrature outputs.
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公开(公告)号:FR2820875B1
公开(公告)日:2003-07-11
申请号:FR0101881
申请日:2001-02-12
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
IPC: H01F17/00 , H01F17/02 , H01F27/36 , H01L21/822 , H01L23/522 , H01L27/04 , H01L27/00
Abstract: Integrated circuit inductance structure comprises: silicon substrate (2); planar winding(s) of a conductive track (1); resistive layer (11), unetched and under the winding; dielectric layer (3) between the winding and the resistive layer; and discontinuous conductive sections (12) individually parallel to a portion of the winding which is the closest and electrically connected to ground and to the resistive layer. Preferred Features: The discontinuous conductive sections (12) are out of true with the winding. Each conductive track (1) is located as near as possible to the nearest portion of the winding. Each portion of the winding is connected to several conductive sections (12). The conductive sections (12) are produced in the same metallic level as the conductive track (1) forming the inductance. The resistive layer has a level of doping of 10 to 10 atoms/cm , preferably 10 atoms/cm . The conductive sections (12) are connected to a contact point by several conductive tracks. Each conductive track is positioned such that the resultant of the electromotive forces induced by the inductance is substantially zero.
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公开(公告)号:FR2812755B1
公开(公告)日:2002-10-31
申请号:FR0010340
申请日:2000-08-04
Applicant: ST MICROELECTRONICS SA
Inventor: LEMAIRE FREDERIC
IPC: H01F17/00 , H01L23/522
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