公开(公告)号：FR2780202A1

公开(公告)日：1999-12-24

申请号：FR9807935

申请日：1998-06-23

Applicant: ST MICROELECTRONICS SA

Inventor： LOUWERS STEPHAN ,  MARTY MICHEL

IPC: H01L21/3213 ,  H01L21/822 ,  H01L23/522 ,  H01L27/04

Abstract: An integrated circuit having a metallization level of different thicknesses includes a track formed in a small thickness portion and an inductor formed in a large thickness portion. In a preferred device, the large thickness portion comprises a first part having a straight edge and a second part having a concave edge, the portion being formed of first and second metal layers separated by an etch stop layer. An Independent claim is given for a method for forming the metallization structure by mask etching techniques.