公开(公告)号：JPH11219873A

公开(公告)日：1999-08-10

申请号：JP30640998

申请日：1998-10-14

Applicant: ST MICROELECTRONICS SA

Inventor： VANDEPUTTE JACQUES ,  BOURDET FLORINE

IPC: H01L21/304 ,  C30B33/00 ,  H01L21/02 ,  H01L29/02

Abstract: PROBLEM TO BE SOLVED: To enable a silicon wafer to be bent without breaking it when a mechanical stress is applied to the wafer by a method wherein the wafer is lessened in thickness as prescribed so as to be flexible, and made to have a restoring force to recover from a deflection. SOLUTION: The first surface of a silicon wafer is subjected to chemical etching and mechanochemical polishing, wherein a holding device is provided to enable the silicon wafer to make an outer cycloid rotary motion to a polishing felt, and molecular adhesion is generated between the second surface of the silicon wafer and the surface of the holding device to enable the holding device to support the wafer to make the wafer as thin as below 80 μm by polishing. The silicon wafer gets flexible to have a restoring force to cover from a deflection. By this setup, integrated circuits formed of the silicon wafer can be improved in mechanical resistance.

公开(公告)号：DE69817118D1

公开(公告)日：2003-09-18

申请号：DE69817118

申请日：1998-10-14

Applicant: ST MICROELECTRONICS SA

Inventor： VANDEPUTTE JACQUES ,  BOURDET FLORINE

IPC: H01L21/304 ,  C30B33/00 ,  H01L21/02 ,  H01L29/02

公开(公告)号：DE69817118T2

公开(公告)日：2004-05-27

申请号：DE69817118

申请日：1998-10-14

Applicant: ST MICROELECTRONICS SA

Inventor： VANDEPUTTE JACQUES ,  BOURDET FLORINE

IPC: H01L21/304 ,  C30B33/00 ,  H01L21/02 ,  H01L29/02