公开(公告)号：DE69325241T2

公开(公告)日：2000-01-27

申请号：DE69325241

申请日：1993-11-29

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS INC

Inventor： PEZZANI ROBERT ,  UGGE ANGELO

IPC: H01L21/822 ,  H01L27/04 ,  H01L27/02 ,  H01L29/747 ,  H01L29/861 ,  H02H3/20 ,  H02H7/20

Abstract: The present invention relates to a circuit for protection against overvoltages comprising, in a substrate (62) with a first type of conductivity, first and second regions (38, 40) with the second type of conductivity; third and fourth regions (44, 46) with the first type of conductivity, formed in the first and the second region, respectively, and comprising subregions (50) through which parts of the first and second regions, respectively, are exposed; a fifth region (52) with the second type of conductivity; a sixth region (56) with the first type of conductivity in the fifth region, this sixth region also comprising subregions (58) through which parts of the fifth region are exposed. The hole density of the subregions of the sixth region is at least two to three times lower than the hole density of the subregions of the third and fourth regions.

公开(公告)号：DE69325241D1

公开(公告)日：1999-07-15

申请号：DE69325241

申请日：1993-11-29

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS INC

Inventor： PEZZANI ROBERT ,  UGGE ANGELO

IPC: H01L21/822 ,  H01L27/04 ,  H01L27/02 ,  H01L29/747 ,  H01L29/861 ,  H02H3/20 ,  H02H7/20

Abstract: The present invention relates to a circuit for protection against overvoltages comprising, in a substrate (62) with a first type of conductivity, first and second regions (38, 40) with the second type of conductivity; third and fourth regions (44, 46) with the first type of conductivity, formed in the first and the second region, respectively, and comprising subregions (50) through which parts of the first and second regions, respectively, are exposed; a fifth region (52) with the second type of conductivity; a sixth region (56) with the first type of conductivity in the fifth region, this sixth region also comprising subregions (58) through which parts of the fifth region are exposed. The hole density of the subregions of the sixth region is at least two to three times lower than the hole density of the subregions of the third and fourth regions.