公开(公告)号：JPH11122978A

公开(公告)日：1999-04-30

申请号：JP22277198

申请日：1998-08-06

Applicant: ST MICROELECTRONICS SRL

Inventor： GALBIATI EZIO ,  BOSCOLO MICHELE ,  BERTOLINI LUCA

IPC: H02P6/08 ,  H02P6/28 ,  H02P6/18

Abstract: PROBLEM TO BE SOLVED: To control currents of respective windings individually by a method wherein the signals of two detection resistors are compared with a same reference signal to generate logic triggers and signals generated by monostable multivibrator in accordance with the logic triggers, and signals generated by phase switching are supplied to synthetic logic gates which output signals for driving respective half bridges. SOLUTION: A current which flows through a winding A is supplied by turning on transistors T1A and T4A. If the voltage drop of a detection resistor RS2 exceeds a control voltage, the output of a comparator COMP2 triggers a monostable multivibrator ONE2 to change its output to a logic value 1 for a required period. Since an Ina signal and the output signal of the monostable multivibrator ONE2 after the OR process change a gate output OR-a (= drive signal INa) to a logic value 1, the MOS transistor T4A is turned off and a MOS transistor T3A is turned on. Then, the MOS transistors T1A and T4A are turned on to start the increase of a current in the phase winding A. If the voltage drop of the detection resistor RS2 exceeds the control voltage, this cycle is repeated.

公开(公告)号：JPH07273627A

公开(公告)日：1995-10-20

申请号：JP9797595

申请日：1995-03-29

Applicant: ST MICROELECTRONICS SRL

Inventor： BERTOLINI LUCA

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/78 ,  H02H9/04 ,  H03K17/00 ,  H03K17/08 ,  H03K17/082 ,  H03K17/615 ,  H03K17/687

Abstract: PURPOSE: To provide a power stage which can evade the loss of the accuracy of the circuit due to current absorption because a current is possibly absorbed at an output node of a circuit using a couple of Zener diodes connected reversely in parallel. CONSTITUTION: A bipolar transistor Q1 for decoupling the output node Vo of the power stage from a 2nd field effect transistor M2 is installed. When the Zener diodes D1 and D2 absorb a current Id, this current is supplied from the transistor Q1, which absorbs it from a high voltage node Vb.

公开(公告)号：DE69721757T2

公开(公告)日：2003-11-13

申请号：DE69721757

申请日：1997-08-08

Applicant: ST MICROELECTRONICS SRL

Inventor： GALBIATI EZIO ,  BOSCOLO MICHELE ,  BERTOLINI LUCA

IPC: H02P6/08 ,  H02P6/28 ,  H02P1/00

Abstract: The control of the current in PWM mode through independently controlled windings of a multiphase motor driven in a "bipolar" mode is implemented by employing only two sense resistors and related control loops, regardless of the actual number of windings.

公开(公告)号：DE69721757D1

公开(公告)日：2003-06-12

申请号：DE69721757

申请日：1997-08-08

Applicant: ST MICROELECTRONICS SRL

Inventor： GALBIATI EZIO ,  BOSCOLO MICHELE ,  BERTOLINI LUCA

IPC: H02P6/08 ,  H02P6/28 ,  H02P1/00

Abstract: The control of the current in PWM mode through independently controlled windings of a multiphase motor driven in a "bipolar" mode is implemented by employing only two sense resistors and related control loops, regardless of the actual number of windings.

公开(公告)号：DE69415958T2

公开(公告)日：1999-05-27

申请号：DE69415958

申请日：1994-03-29

Applicant: ST MICROELECTRONICS SRL

Inventor： BERTOLINI LUCA

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/78 ,  H02H9/04 ,  H03K17/00 ,  H03K17/08 ,  H03K17/082 ,  H03K17/615 ,  H03K17/687

Abstract: A power stage of quasi-complementary symmetry, including a common-source FET and a common-drain FET, with a reduced absorption of current under the conditions of high impedance of the output. The driving node of the upper (common-drain) transistor is decoupled from the output node of the stage, preventing the current generator Id, which discharges the control node, from absorbing current from the load connected to the output stage, during a phase of high output impedance. This is preferably realized by using a field effect transistor which has its gate connected to the output node of the stage, and is connected to provide the current drawn from the discharge generator of the driving node of the upper common-drain transistor, absorbing it from the supply node VDD instead of absorbing it from the voltage overdriven node Vb. This alternative solution avoids excessive loading of the high-voltage supply, and is particularly useful when the overdriven node Vb drives multiple output stages.

公开(公告)号：DE69415958D1

公开(公告)日：1999-02-25

申请号：DE69415958

申请日：1994-03-29

Applicant: ST MICROELECTRONICS SRL

Inventor： BERTOLINI LUCA

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/78 ,  H02H9/04 ,  H03K17/00 ,  H03K17/08 ,  H03K17/082 ,  H03K17/615 ,  H03K17/687

Abstract: A power stage of quasi-complementary symmetry, including a common-source FET and a common-drain FET, with a reduced absorption of current under the conditions of high impedance of the output. The driving node of the upper (common-drain) transistor is decoupled from the output node of the stage, preventing the current generator Id, which discharges the control node, from absorbing current from the load connected to the output stage, during a phase of high output impedance. This is preferably realized by using a field effect transistor which has its gate connected to the output node of the stage, and is connected to provide the current drawn from the discharge generator of the driving node of the upper common-drain transistor, absorbing it from the supply node VDD instead of absorbing it from the voltage overdriven node Vb. This alternative solution avoids excessive loading of the high-voltage supply, and is particularly useful when the overdriven node Vb drives multiple output stages.