公开(公告)号：ITMI981428A1

公开(公告)日：1999-12-22

申请号：ITMI981428

申请日：1998-06-22

Applicant: ST MICROELECTRONICS SRL

Inventor： PINTO ANGELO ,  LO VERDE DOMENICO ,  RAPISARDA CIRINO

IPC: H01L20060101

公开(公告)号：IT1301779B1

公开(公告)日：2000-07-07

申请号：ITMI981428

申请日：1998-06-22

Applicant: ST MICROELECTRONICS SRL

Inventor： PINTO ANGELO ,  LO VERDE DOMENICO ,  RAPISARDA CIRINO

IPC: H01L20060101

公开(公告)号：DE60030417D1

公开(公告)日：2006-10-12

申请号：DE60030417

申请日：2000-05-08

Applicant: ST MICROELECTRONICS SRL

Inventor： LO VERDE DOMENICO ,  BRUNO GIUSEPPE

IPC: H01L23/58

Abstract: On a semiconductor material body (15) housing an electronic device (3) a peripheral region (22) of semiconductor material and at least one pad (20, 21) are initially formed. The peripheral region (22) is connected to a first terminal of the electronic device (3) and extends on at least one peripheral portion of the semiconductor material body (15). The pad (20, 21) is insulated from the semiconductor material body and is electrically connected to a second terminal of the electronic device (3). The semiconductor material body (15) is fixed to a support body (10) formed by a blank (5) belonging to a reel (1). The pad (20, 21) is connected by a wire (24) to an electrode (11, 12) formed by the blank (5). Next, a connection region (25a) is formed on the peripheral region (22) and surrounds, at least partially, the semiconductor material body (15) and the support body (10). The connection region (25a) is advantageously obtained by galvanic growth.