公开(公告)号：DE602005018067D1

公开(公告)日：2010-01-14

申请号：DE602005018067

申请日：2005-10-13

Applicant: ST MICROELECTRONICS SRL

Inventor： MALHI VIJAY KUMAR ,  MONDELLO ANTONINO

IPC: G11C16/10

Abstract: The present invention describes a non-volatile memory device comprising a matrix of non-volatile memory cells (1), a writing circuitry (2) and a reading circuitry (3) for said memory cells of the matrix. The device comprises a counter comprising a sector (11) of non-volatile memory cells and logic means (5) capable of scanning the memory cells of said sector (11) by means of said reading circuitry and of updating said sector (11) by commanding the writing of a given value in a memory cell different from the memory cell containing said given value by means of said writing circuitry (2).