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    PROTECTION CIRCUIT FOR STATIC DISCHARGE, TRANSISTOR HAVING CIRCUIT THEREOF, AND SEMICONDUCTOR ELEMENT
    1.
    发明专利
    PROTECTION CIRCUIT FOR STATIC DISCHARGE, TRANSISTOR HAVING CIRCUIT THEREOF, AND SEMICONDUCTOR ELEMENT 失效

    公开(公告)号：JPH11168181A

    公开(公告)日：1999-06-22

    申请号：JP26787598

    申请日：1998-09-22

    Applicant: ST MICROELECTRONICS SRL

    Inventor： RAVANELLI ENRICO M A

    IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06

    Abstract: PROBLEM TO BE SOLVED: To obtain a protection circuit having a structure wherein latch-ups and interferences due to electromagnetic waves will not be generated. SOLUTION: This device has been improved for protecting integrated circuits. An NPN-type bipolar transistor Q1, which is normally connected between a terminal (pad) T1 to be protected and a power supply line T2 that is normally the power supply path for the integrated circuit, is provided. The emitter of the transistor is connected to the terminal T1, the collector is connected to the power supply path T2, and the base is connected to a ground GND, respectively.

    PROTECTIVE CIRCUIT
    2.
    发明专利
    PROTECTIVE CIRCUIT 失效

    公开(公告)号：JPH11178205A

    公开(公告)日：1999-07-02

    申请号：JP27835698

    申请日：1998-09-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： RAVANELLI ENRICO M A

    IPC: H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H02H9/04 ,  H03K17/0812

    Abstract: PROBLEM TO BE SOLVED: To effectively protect the action of a power supply line from the static discharge to the terminal of the power supply line by connecting the gate of a first electrolytic transistor to a second power supply line through a front-end switch circuit. SOLUTION: A protective circuit utilizes a MOS type field effect transistor GCTRL connected between a pulse power source VDD to be protected by means of drain and source terminals and a ground GND. The gate terminal of the transistor GCTRL is grounded though a resistor RG and a capacitor which are connected in parallel with each other and, at the same time, connected to a low-voltage power source LVRAIL through a bias current generator. However, the power source LVRAIL is adjusted against and protected from ESD events by means of an exclusive protective device. Then the gate terminal of the transistor GCTRL is always grounded whenever the ESD events occur due to power failures. Therefore, the action of a power supply line can be protected effectively front static discharge to the terminal of the power supply line.

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