公开(公告)号：JP2001053229A

公开(公告)日：2001-02-23

申请号：JP2000225509

申请日：2000-07-26

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVESI SEBASTIANO

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/768 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a capactor element where a parasitic capacitance is minxmum. SOLUTION: A first metal film 3 is allowed to stick to a first dielectric film 2 on a semiconductor substrate 1 to form a lower part plate 4 and a mutual communication pad 5. A first opening 7 related to the lower part plate through a second dielectric film 6 on the first dielectric film is formed, and a second opening related to the mutual communication pad through a third dielectric film 8 sticking inside the first opening on the first dielectric film is formed. A third opening related to the lower part plate through a fourth dielectric film 10 sticking on the entire surface is formed, and a fourth opening related to the second opening through the fourth dielectric film is formed. A second metal film 13 is allowed to stick inside the third and fourth openings to form an upper part plate 13, completing a mutual communication 14. The fourth dielectric film provides totally selective etching for the third dielectric film.

公开(公告)号：ITMI20120191A1

公开(公告)日：2013-08-11

申请号：ITMI20120191

申请日：2012-02-10

Applicant: ST MICROELECTRONICS SRL

Inventor： ACCARDI CORRADO ,  LOVERSO STELLA ,  RAVESI SEBASTIANO ,  SPARTA NOEMI GRAZIANA

公开(公告)号：DE69934975T2

公开(公告)日：2007-12-06

申请号：DE69934975

申请日：1999-07-30

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVESI SEBASTIANO

IPC: H01L21/02 ,  H01L27/04 ,  H01L21/768 ,  H01L21/822

公开(公告)号：ITVA20050055A1

公开(公告)日：2007-04-01

申请号：ITVA20050055

申请日：2005-09-30

Applicant: ST MICROELECTRONICS SRL

Inventor： LEONARDI SALVATORE ,  RAVESI SEBASTIANO ,  RENNA CROCIFISSO MARCO ANTONIO ,  SICILIANO SIMONE ANGELO

公开(公告)号：IT1320428B1

公开(公告)日：2003-11-26

申请号：ITTO20000565

申请日：2000-06-09

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVESI SEBASTIANO

IPC: H01L21/02 ,  H01L21/288

Abstract: A process for manufacturing a ferroelectric capacitor includes the steps of forming a first plate of a noble metal, preferably platinum, above an insulating layer of a wafer; forming a dielectric material layer with ferroelectric properties; and forming a second plate of a noble metal above said dielectric material layer. The first plate and the second plate are formed by electrochemical deposition of a metal.

公开(公告)号：ITMI20112296A1

公开(公告)日：2013-06-17

申请号：ITMI20112296

申请日：2011-12-16

Applicant: ST MICROELECTRONICS SRL

Inventor： ACCARDI CORRADO ,  LOVERSO STELLA ,  RAVESI SEBASTIANO ,  SPARTA NOEMI GRAZIANA

公开(公告)号：DE69934975D1

公开(公告)日：2007-03-15

申请号：DE69934975

申请日：1999-07-30

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVESI SEBASTIANO

IPC: H01L21/02 ,  H01L27/04 ,  H01L21/768 ,  H01L21/822

公开(公告)号：ITTO20120516A1

公开(公告)日：2013-12-15

申请号：ITTO20120516

申请日：2012-06-14

Applicant: ST MICROELECTRONICS SRL

Inventor： ACCARDI CORRADO ,  LOVERSO STELLA ,  RAVESI SEBASTIANO ,  SPARTA NOEMI GRAZIANA

公开(公告)号：ITMI982788A1

公开(公告)日：2000-06-22

申请号：ITMI982788

申请日：1998-12-22

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVESI SEBASTIANO ,  SANTANGELO ANTONELLO

IPC: H01L21/02 ,  H01L21/768

公开(公告)号：ITTO20010788A1

公开(公告)日：2003-02-03

申请号：ITTO20010788

申请日：2001-08-03

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVESI SEBASTIANO ,  ALBERTI ALESSANDRA ,  LA VIA FRANCESCO