公开(公告)号：IT201900025132A1

公开(公告)日：2021-06-20

申请号：IT201900025132

申请日：2019-12-20

Applicant: ST MICROELECTRONICS SRL ,  ST MICROELECTRONICS ROUSSET

Inventor： LETOR ROMEO ,  PAVLIN ANTOINE ,  RUSSO ALFIO ,  LECCI NADIA

公开(公告)号：IT201900002297A1

公开(公告)日：2020-08-18

申请号：IT201900002297

申请日：2019-02-18

Applicant: ST MICROELECTRONICS SRL

Inventor： LETOR ROMEO

IPC: H02H20060101

公开(公告)号：ITVA20080070A1

公开(公告)日：2010-06-30

申请号：ITVA20080070

申请日：2008-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： GIUFFRE FRANCESCO ,  LETOR ROMEO

公开(公告)号：IT1392598B1

公开(公告)日：2012-03-09

申请号：ITVA20080070

申请日：2008-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： GIUFFRÉ FRANCESCO ,  LETOR ROMEO

IPC: G01P3/48

公开(公告)号：DE69731181D1

公开(公告)日：2004-11-18

申请号：DE69731181

申请日：1997-02-19

Applicant: ST MICROELECTRONICS SRL

Inventor： FRAGAPANE LEONARDO ,  LETOR ROMEO

IPC: H03K17/082

Abstract: A fast operating, electronic protection device (1) against overvoltages, intended for a power transistor (M1) having at least one control terminal (G) of the MOS type, is of the type which comprises a Zener diode (Z1) associated with the power transistor (M1) and integrated together therewith in a semiconductor substrate (9), and comprises a second transistor (M2) connected to the power transistor into a Darlington configuration and connected, in turn, to the Zener diode (Z1). The protection from overvoltages provided by the device (1) is very fast in operation, and can be implemented in integrated form at reduced cost and without introducing parasitic elements.