公开(公告)号：EP0132326A3

公开(公告)日：1986-11-26

申请号：EP84304427

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Raccah, Paul Mordecai ,  Serreze, Harvey Bruce ,  Olego, Diego Jose ,  Schachter, Rozalie ,  Spicer, William Edward ,  Brock, David Geoffrey

IPC: H01L21/314

CPC classification number: H01L21/314 ,  H01L23/291 ,  H01L23/3171 ,  H01L51/0508 ,  H01L51/0512 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/00

Abstract: A semiconductor characterised in that it has a pnictide-rich layer on a surface thereof is disclosed, as is the production thereof. A new form of pnictide characterized in that it comprises a layer of amorphous pnictide-rich material having a layer-like local order. The accompanying illustration shows a comparison of Raman spectra from which it may be concluded that the local order of the present fibres is the amorphous counterpart of the puckered layer-like, sheet-like crystalline structure of black phosphorus. In general terms, pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms (4x 10- 6 cms) thick and grown preferably by molecular beam deposition, although other processes, such as vacuum evaporation, sputtering, chemical vapour deposition and deposition from a liquid melt, may be used. The layers may be grown on the , and surface of III-V crystals. The pnictide layer reduces the density of surface states and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices, for example, to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes and to improve performance of opto-electronic devices, such as light-emitting diodes, lasers, solar cells, photo-cathodes and photo-detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof. The present invention represents an advance over the prior art.

公开(公告)号：EP0132326A2

公开(公告)日：1985-01-30

申请号：EP84304427.2

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Raccah, Paul Mordecai ,  Serreze, Harvey Bruce ,  Olego, Diego Jose ,  Schachter, Rozalie ,  Spicer, William Edward ,  Brock, David Geoffrey

IPC: H01L21/314

CPC classification number: H01L21/314 ,  H01L23/291 ,  H01L23/3171 ,  H01L51/0508 ,  H01L51/0512 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/00

Abstract: A semiconductor characterised in that it has a pnictide-rich layer on a surface thereof is disclosed, as is the production thereof.
A new form of pnictide characterized in that it comprises a layer of amorphous pnictide-rich material having a layer-like local order.
The accompanying illustration shows a comparison of Raman spectra from which it may be concluded that the local order of the present fibres is the amorphous counterpart of the puckered layer-like, sheet-like crystalline structure of black phosphorus.
In general terms, pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms (4x 10- 6 cms) thick and grown preferably by molecular beam deposition, although other processes, such as vacuum evaporation, sputtering, chemical vapour deposition and deposition from a liquid melt, may be used. The layers may be grown on the , and surface of III-V crystals. The pnictide layer reduces the density of surface states and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices, for example, to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes and to improve performance of opto-electronic devices, such as light-emitting diodes, lasers, solar cells, photo-cathodes and photo-detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.
The present invention represents an advance over the prior art.

Abstract translation: 其特征在于，在其表面上具有富含pnictide的层，其生产方法也被公开。 其特征在于，其包含具有层状局部顺序的无定形富含pnictide的材料层。 附图示出了拉曼光谱的比较，从中可以得出结论，本发明纤维的局部顺序是褶皱层状，黑磷片状晶体结构的无定形对应物。 一般来说，在III-V族半导体，特别是InP，GaP和GaAs上生长的pnictide薄膜，特别是磷，是无定形的，并且具有新颖的层状褶皱片状局部顺序。 薄膜通常为400埃（4×10 -6 cms），并且优选通过分子束沉积生长，尽管其它工艺，例如真空蒸发，溅射，化学气相沉积和来自液体熔体的沉积可能 使用。 这些层可以在III-V晶体的<100>，<110>和<111>表面上生长。 第一层降低了表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面上的电子浓度增加，并且表面复合速度降低并且光致发光强度增加。 这些层可以用于MIS和金属 - 半导体（肖特基）器件，例如，绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并提高性能 的光电子器件，例如发光二极管，激光器，太阳能电池，光电阴极和光电探测器。 可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。 磷酸盐可以是磷，砷，锑或铋，或它们的组合。 本发明代表了现有技术的进步。