公开(公告)号：WO2011050165A3

公开(公告)日：2011-08-18

申请号：PCT/US2010053553

申请日：2010-10-21

Applicant: STC UNM ,  LEE SEUNG-CHANG ,  KRISHNA SANJAY ,  BRUECK STEVEN

Inventor： LEE SEUNG-CHANG ,  KRISHNA SANJAY ,  BRUECK STEVEN

IPC: G01J5/28

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  G01J5/0853 ,  G02B6/1226 ,  H01L27/1446 ,  H01L31/03046 ,  H01L31/1035 ,  Y02E10/544 ,  Y02P70/521

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract translation: 描述了可以共振地增强红外检测器的性能的等离子体激元检测器。 更具体地，本公开涉及通过增加与入射辐射场的耦合来提高半导体红外检测器的量子效率，这是由于与由金属/半导体界面支撑的表面等离子体波的谐振耦合而不影响器件的暗电流 ，导致比表面等离子体波谱带宽更好的检测性。

公开(公告)号：WO2017023394A3

公开(公告)日：2017-04-20

申请号：PCT/US2016032501

申请日：2016-05-13

Applicant: STC UNM

Inventor： LEE SEUNG-CHANG ,  BRUECK STEVEN R J

IPC: H01L29/88 ,  B82Y40/00

CPC classification number: H01L21/02603 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L21/02664 ,  H01L21/823807 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0673

Abstract: Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire.

Abstract translation: 提供一种生长纳米线的方法，包括：提供具有基部的基板，所述基部具有第一表面和在所述第一表面的上方或下方延伸的至少一个支撑结构; 在所述至少一个支撑结构上形成电介质涂层; 在衬底上形成光刻胶涂层; 在电介质涂层的至少一部分上形成金属涂层; 去除所述电介质涂层的一部分以暴露所述至少一个支撑结构的表面; 去除所述至少一个支撑结构的一部分以形成纳米线生长表面; 在所述至少一个支撑结构中的相应一个的所述纳米线生长表面上生长至少一个纳米线，其中所述纳米线包括附接到所述生长表面的根端和从所述根端延伸的相对的自由端; 并弹性弯曲所述至少一个纳米线。