公开(公告)号：NL2004698C

公开(公告)日：2011-11-15

申请号：NL2004698

申请日：2010-05-11

Applicant: STICHTING ENERGIE

Inventor： ROMIJN INGRID ,  BULTMAN JAN HENDRIK ,  MEWE AGNES ,  WEEBER ARTHUR ,  LAMERS MACHTELD

IPC: H01L31/0224

CPC classification number: H01L31/02245 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：NL2009836C

公开(公告)日：2014-05-21

申请号：NL2009836

申请日：2012-11-19

Applicant: STICHTING ENERGIE

Inventor： BULTMAN JAN HENDRIK ,  JONG PAULUS CORNELIS ,  BENNETT IAN JOHN ,  BROEK KORNELIS MARINUS ,  KLOOS MARIUS ,  SP TH MARTIN

IPC: H01L31/048 ,  H01L31/05 ,  H01L31/18

CPC classification number: H01L31/0516 ,  H01L31/0203 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/048 ,  H01L31/18 ,  Y02E10/50

公开(公告)号：NL2004698C2

公开(公告)日：2011-11-15

申请号：NL2004698

申请日：2010-05-11

Applicant: STICHTING ENERGIE

Inventor： ROMIJN INGRID ,  BULTMAN JAN HENDRIK ,  MEWE AGNES ,  WEEBER ARTHUR ,  LAMERS MACHTELD

IPC: H01L31/0224

公开(公告)号：NL2009836C2

公开(公告)日：2014-05-21

申请号：NL2009836

申请日：2012-11-19

Applicant: STICHTING ENERGIE

Inventor： BULTMAN JAN HENDRIK ,  JONG PAULUS CORNELIS ,  BENNETT IAN JOHN ,  BROEK KORNELIS MARINUS ,  KLOOS MARIUS ,  SP TH MARTIN

IPC: H01L31/048 ,  H01L31/05 ,  H01L31/18

Abstract: A solar panel includes a stack of at least one back contacted solar cell, a first encapsulant layer and a back-sheet contact layer. The solar cell includes back side electrical contacts. The back contact sheet layer includes a patterned conductor circuit, which has contacting areas located at locations corresponding to locations of the electrical contacts on the at least one solar cell. The encapsulant layer has a pattern of openings at locations corresponding to the locations of the electrical contacts. The solar cell is arranged on top of the first encapsulant layer that is positioned on top of the back-sheet contact layer, with the rear surface of the at least one solar cell facing the patterned conductor circuit surface. Each electrical contact is connected through a corresponding opening in the first encapsulant layer with a respective corresponding contact area of the conductor circuit by an interconnecting body.

公开(公告)号：AU7457600A

公开(公告)日：2001-04-30

申请号：AU7457600

申请日：2000-09-01

Applicant: STICHTING ENERGIE

Inventor： BULTMAN JAN HENDRIK

IPC: H01L21/225 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18

Abstract: A method for making a semiconductor device having a pattern of highly doped regions located some distance apart in a semiconductor substrate and regions of low doping located between the highly doped regions. A diffusion barrier material is applied to the semiconductor substrate at the location of the regions of low doping by imprinting with the barrier material in the pattern of the regions of low doping. The doping material is applied after or before imprinting with barrier material so that the highly doped regions are formed essentially between the barrier material in the substrate.

公开(公告)号：NL1012961C2

公开(公告)日：2001-03-05

申请号：NL1012961

申请日：1999-09-02

Applicant: STICHTING ENERGIE

Inventor： BULTMAN JAN HENDRIK

IPC: H01L21/225 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18

Abstract: A method for making a semiconductor device having a pattern of highly doped regions located some distance apart in a semiconductor substrate and regions of low doping located between the highly doped regions. A diffusion barrier material is applied to the semiconductor substrate at the location of the regions of low doping by imprinting with the barrier material in the pattern of the regions of low doping. The doping material is applied after or before imprinting with barrier material so that the highly doped regions are formed essentially between the barrier material in the substrate.