公开(公告)号：US09754756B2

公开(公告)日：2017-09-05

申请号：US15150895

申请日：2016-05-10

Applicant: STMICROELECTRONICS S.R.L. ,  STMICROELECTRONICS PTE LTD

Inventor： Davide Giuseppe Patti ,  Myung Sung Kim

IPC: H01J1/02 ,  H01J19/02 ,  H01J9/18 ,  H01J21/20 ,  H01J21/04

CPC classification number: H01J19/02 ,  H01J9/025 ,  H01J9/18 ,  H01J21/04 ,  H01J21/105 ,  H01J21/20 ,  H01J2209/012 ,  H01J2209/02

Abstract: A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60° with respect to a perpendicular to the surface of device.

公开(公告)号：US20170148604A1

公开(公告)日：2017-05-25

申请号：US15150895

申请日：2016-05-10

Applicant: STMICROELECTRONICS S.R.L. ,  STMICROELECTRONICS PTE LTD

Inventor： Davide Giuseppe Patti ,  Myung Sung Kim

IPC: H01J19/02 ,  H01J21/20 ,  H01J21/04 ,  H01J9/18

CPC classification number: H01J19/02 ,  H01J9/025 ,  H01J9/18 ,  H01J21/04 ,  H01J21/105 ,  H01J21/20 ,  H01J2209/012 ,  H01J2209/02

Abstract: A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60° with respect to a perpendicular to the surface of device.