公开(公告)号：EP0793272B1

公开(公告)日：2003-12-17

申请号：EP97301336.0

申请日：1997-02-27

Applicant: STMicroelectronics, Inc.

Inventor： Blanchard, Richard A.

IPC: H01L27/02

CPC classification number: H01L27/0255 ,  H01L27/0248

公开(公告)号：EP1547969B1

公开(公告)日：2012-10-31

申请号：EP04257172.9

申请日：2004-11-19

Applicant: STMicroelectronics, Inc.

Inventor： Blanchard, Richard A. ,  McAlexander, Joseph C.

IPC: B81C1/00

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/014

公开(公告)号：EP1547969A3

公开(公告)日：2006-04-12

申请号：EP04257172.9

申请日：2004-11-19

Applicant: STMicroelectronics, Inc.

Inventor： Blanchard, Richard A. ,  McAlexander, Joseph C.

IPC: B81B3/00

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/014

Abstract: A released beam structure fabricated in trench and manufacturing method thereof are provided herein. One embodiment of a released beam structure according to the present invention comprises a semiconductor substrate, a trench, a first conducting layer, and a beam. The trench extends into the semiconductor substrate and has walls. The first conducting layer is positioned over the walls of the trench at selected locations. The beam is positioned with the trench and is connected at a first portion thereof to the semiconductor substrate and movable at a second portion thereof. The second portion of the beam is spaced from the walls of the trench by a selected distance. Therefore, the second portion of the beam is free to move in a plane that is perpendicular or parallel to the surface of the substrate, and could be deflected to electrically contact with the walls of the trench in response to a predetermined acceleration force or a predetermined temperature variation applied on the beam structure. Other beam structures such as a beam held at both ends, or a beam held in the middle are also possible. Several beam structures at different angles can be fabricated simultaneously and mechanical etching stops are automatically formed to prevent unwanted overstress conditions when manufacturing several beam structures at the same time. Beam structures can also be manufactured in three orthogonal directions, providing information on acceleration in any direction.

公开(公告)号：EP0747967B1

公开(公告)日：2002-02-27

申请号：EP96303213.1

申请日：1996-05-08

Applicant: STMicroelectronics, Inc.

Inventor： Blanchard, Richard A.

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7811 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7802 ,  H01L29/7813

Abstract: A low-voltage high-current discrete insulated-gate field-effect transistor which is made by a very economical process with two silicon etches. A buried poly gate gates conduction along a trench sidewall. The channel is provided by the residuum of an epi layer, and the source diffusion is provided by an unmasked implant which is screened only by various grown oxides.

公开(公告)号：EP1547969A2

公开(公告)日：2005-06-29

申请号：EP04257172.9

申请日：2004-11-19

Applicant: STMicroelectronics, Inc.

Inventor： Blanchard, Richard A. ,  McAlexander, Joseph C.

IPC: B81B3/00

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/014

Abstract: A released beam structure fabricated in trench and manufacturing method thereof are provided herein. One embodiment of a released beam structure according to the present invention comprises a semiconductor substrate, a trench, a first conducting layer, and a beam. The trench extends into the semiconductor substrate and has walls. The first conducting layer is positioned over the walls of the trench at selected locations. The beam is positioned with the trench and is connected at a first portion thereof to the semiconductor substrate and movable at a second portion thereof. The second portion of the beam is spaced from the walls of the trench by a selected distance. Therefore, the second portion of the beam is free to move in a plane that is perpendicular or parallel to the surface of the substrate, and could be deflected to electrically contact with the walls of the trench in response to a predetermined acceleration force or a predetermined temperature variation applied on the beam structure. Other beam structures such as a beam held at both ends, or a beam held in the middle are also possible. Several beam structures at different angles can be fabricated simultaneously and mechanical etching stops are automatically formed to prevent unwanted overstress conditions when manufacturing several beam structures at the same time. Beam structures can also be manufactured in three orthogonal directions, providing information on acceleration in any direction.

Abstract translation: 中提供了在其沟槽和制造方法制造的释放梁结构。 释放梁结构雅丁到本发明的一个实施例包括半导体衬底，形成沟槽，第一导电层，和一个光束。 所述沟槽延伸到所述半导体衬底和具有壁。 该第一导电层被定位在所述沟槽中的所选择的位置的壁。 束被定位成与所述沟槽和在其与半导体基板和可动的第一部分被连接在第二部分上。 光束的第二部分从所述沟槽的壁由选定的距离间隔开。 因此，梁的第二部分自由地在一个平面内移动并垂直于或平行于基板的表面上，并响应于预定的加速力或预定的可偏转以与所述沟槽的壁电接触 温度变化施加在梁结构。 其它的梁结构：因此，例如在两端保持的光束，或在中间保持的光束是可能的。 在不同角度的若干梁结构可以同时制造，并且机械蚀刻停止被自动形成，以防止不希望的过载条件下当在Sametime制造几个梁结构。 梁结构因此可以在三个正交方向上进行制造，在任何方向上提供的加速度信息。

公开(公告)号：EP0793272A3

公开(公告)日：2000-09-13

申请号：EP97301336.0

申请日：1997-02-27

Applicant: STMicroelectronics, Inc.

Inventor： Blanchard, Richard A.

IPC: H01L27/02

CPC classification number: H01L27/0255 ,  H01L27/0248

Abstract: There is provided protection for a first pad of an integrated circuit, the integrated circuit having a second pad to receive a first supply voltage. A first region of a first conductivity type is coupled to the first pad; a second region of a second conductivity type is coupled to the second pad; a substrate of the second conductivity type contacts the first and second regions; and there is an epitaxial layer of the first conductivity type. An epitaxial region contacts the first and second regions. A first diode can be formed outside the substrate between the first and second pads through at least two of the first region, the second region, and the epitaxial region. The protection structure may include first and second portions, each portion having a different voltage threshold. The first diode can be formed through the second portion, but not the first portion.