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1.发明公开Improved reliability and improved frequency response package for extremely high power density transistors 审中-公开对于具有非常高的功率密度的晶体管壳体具有改进的可靠性和改进的频率响应
公开(公告)号：EP1722414A3
公开(公告)日：2008-12-24
申请号：EP06251749.5
申请日：2006-03-30
Applicant: STMicroelectronics, Inc.
Inventor： Rotay, Craig J.
IPC: H01L23/498 , H05K3/34
CPC classification number: H01L23/49562 , H01L2924/0002 , H01L2924/3011 , H05K3/3426 , H05K2201/10166 , H05K2201/10818 , H05K2201/1084 , Y02P70/613 , H01L2924/00
Abstract: A high power density transistor structure includes a transistor package capable of housing a high power density transistor. The transistor package has a package insulator and a plurality of transistor leads. Each of the transistor leads has a far end, a near end and a lead periphery. The high power density transistor structure also includes a solder lock located on at least one of the transistor leads. At least a portion of the solder lock is attachable to a printed circuit board (PCB). At least a portion of the lead periphery of each transistor lead is attachable to at least one of the PCB and the package insulator.
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2.发明公开Improved reliability and improved frequency response package for extremely high power density transistors 审中-公开对于具有非常高的功率密度的晶体管壳体具有改进的可靠性和改进的频率响应
公开(公告)号：EP1722414A2
公开(公告)日：2006-11-15
申请号：EP06251749.5
申请日：2006-03-30
Applicant: STMicroelectronics, Inc.
Inventor： Rotay, Craig J.
IPC: H01L23/498 , H01L25/11 , H01L23/66 , H05K1/18
CPC classification number: H01L23/49562 , H01L2924/0002 , H01L2924/3011 , H05K3/3426 , H05K2201/10166 , H05K2201/10818 , H05K2201/1084 , Y02P70/613 , H01L2924/00
Abstract: A high power density transistor structure includes a transistor package capable of housing a high power density transistor. The transistor package has a package insulator and a plurality of transistor leads. Each of the transistor leads has a far end, a near end and a lead periphery. The high power density transistor structure also includes a solder lock located on at least one of the transistor leads. At least a portion of the solder lock is attachable to a printed circuit board (PCB). At least a portion of the lead periphery of each transistor lead is attachable to at least one of the PCB and the package insulator.
Abstract translation: 高功率密度晶体管结构包括能够容纳一个高功率密度晶体管的晶体管封装。 晶体管封装具有包绝缘体和晶体管引线的多元性。 每个晶体管引线具有远端，近端和引线周围。 因此，高功率密度晶体管结构包括焊料锁位于晶体管引线中的至少一个。 至少所述焊料锁的一部分附连到印刷电路板（PCB）。 至少各晶体管引线的引线外周的一部分可附接到所述PCB中的至少一个和封装绝缘体。
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