-
公开(公告)号：US09875870B2
公开(公告)日：2018-01-23
申请号：US15477876
申请日：2017-04-03
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Pascal Fornara , Sebastian Orellana
CPC classification number: H01H49/00 , H01H59/0009 , H01H2001/0052 , H01H2001/0057 , H01H2001/0078 , H01H2061/006 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L23/525 , H01L23/53238 , H01L23/53252 , H01L23/53266
Abstract: In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
-
2.发明申请Metallic Device Having Mobile Element in a Cavity of the BEOL of an Integrated Circuit 有权在集成电路的BEOL的腔中具有移动元件的金属器件公开(公告)号：US20160293540A1
公开(公告)日：2016-10-06
申请号：US14920621
申请日：2015-10-22
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Pascal Fornara , Sebastian Orellana
IPC: H01L23/522 , H01H59/00 , H01L23/532
CPC classification number: H01H49/00 , H01H59/0009 , H01H2001/0052 , H01H2001/0057 , H01H2001/0078 , H01H2061/006 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L23/525 , H01L23/53238 , H01L23/53252 , H01L23/53266
Abstract: In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
Abstract translation: 为了例如，为了改善位于金属化水平的两个金属片之间的欧姆接触，这两个金属片配备有位于金属化水平处的至少部分地至少部分地在上面的通孔级的两个偏移通孔。 每个偏移通孔包括例如不可氧化或基本上不可氧化的化合物，例如Ti / TiN的阻挡层。
-
公开(公告)号：US20170207052A1
公开(公告)日：2017-07-20
申请号：US15477876
申请日：2017-04-03
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Pascal Fornara , Sebastian Orellana
CPC classification number: H01H49/00 , H01H59/0009 , H01H2001/0052 , H01H2001/0057 , H01H2001/0078 , H01H2061/006 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L23/525 , H01L23/53238 , H01L23/53252 , H01L23/53266
Abstract: In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
-
公开(公告)号：US09653392B2
公开(公告)日：2017-05-16
申请号：US14920621
申请日：2015-10-22
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Pascal Fornara , Sebastian Orellana
IPC: H01L23/522 , H01L23/532 , H01H59/00 , H01H1/00 , H01H61/00
CPC classification number: H01H49/00 , H01H59/0009 , H01H2001/0052 , H01H2001/0057 , H01H2001/0078 , H01H2061/006 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L23/525 , H01L23/53238 , H01L23/53252 , H01L23/53266
Abstract: In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
-
-
-
Search Results
4
records
(took 0.045 seconds)
