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公开(公告)号:US20240204112A1
公开(公告)日:2024-06-20
申请号:US18593490
申请日:2024-03-01
Applicant: STMicroelectronics (Tours) SAS
Inventor: Arnaud YVON , Lionel JAOUEN
IPC: H01L29/861 , H01L21/761 , H01L29/06 , H01L29/66
CPC classification number: H01L29/8611 , H01L21/761 , H01L29/0623 , H01L29/66128 , H01L29/66136
Abstract: A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a forst doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.
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公开(公告)号:US20220209024A1
公开(公告)日:2022-06-30
申请号:US17556634
申请日:2021-12-20
Applicant: STMicroelectronics (Tours) SAS
Inventor: Arnaud YVON , Lionel JAOUEN
IPC: H01L29/861 , H01L29/06 , H01L29/66 , H01L21/761
Abstract: A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.
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