公开(公告)号：US20130328150A1

公开(公告)日：2013-12-12

申请号：US13895715

申请日：2013-05-16

Applicant: STMicroelectronics International NV

Inventor： Raul Andres BIANCHI ,  Pascal FONTENEAU

IPC: H01L31/0256 ,  H01L27/144 ,  H01L31/18

CPC classification number: H01L31/0256 ,  H01L27/144 ,  H01L29/0684 ,  H01L29/66113 ,  H01L29/866 ,  H01L31/1892

Abstract: An avalance diode including, between two heavily-doped regions of opposite conductivity types arranged at the surface of a semiconductor region, a lightly-doped region, with length L of the lightly-doped region between the heavily-doped regions approximately ranging between 50 and 200 nm.

Abstract translation: 一种平均二极管，包括布置在半导体区域的表面处的相反导电类型的两个重掺杂区域之间的轻掺杂区域，重掺杂区域之间的轻掺杂区域的长度L大约在50和 200nm。