公开(公告)号：EP2274770A1

公开(公告)日：2011-01-19

申请号：EP09739614.7

申请日：2009-04-28

Applicant: STMicroelectronics N.V.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  CORDELL, Richard

IPC: H01L21/335

CPC classification number: H01L29/7813 ,  H01L29/7803 ,  H01L29/7805

Abstract: A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25µm technology. Self-aligned processing can be used.