公开(公告)号：EP2274770A1

公开(公告)日：2011-01-19

申请号：EP09739614.7

申请日：2009-04-28

Applicant: STMicroelectronics N.V.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  CORDELL, Richard

IPC: H01L21/335

CPC classification number: H01L29/7813 ,  H01L29/7803 ,  H01L29/7805

Abstract: A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25µm technology. Self-aligned processing can be used.

公开(公告)号：EP2384518B1

公开(公告)日：2019-09-04

申请号：EP10729478.7

申请日：2010-01-06

Applicant: STMicroelectronics N.V.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L29/861

公开(公告)号：EP2384518A2

公开(公告)日：2011-11-09

申请号：EP10729478.7

申请日：2010-01-06

Applicant: STMicroelectronics N.V.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L29/861 ,  H01L29/872

CPC classification number: H01L29/7412 ,  H01L27/0811 ,  H01L27/0814 ,  H01L29/861

Abstract: A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.

公开(公告)号：EP3447803A3

公开(公告)日：2019-06-19

申请号：EP18190780.9

申请日：2008-09-25

Applicant: STMicroelectronics N.V.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L29/861 ,  H01L21/329 ,  H01L29/06 ,  H01L29/78

Abstract: There is provided an adjustable field effect rectifier comprising an epitaxial layer (420) of a first conductivity with a drain formed on one side of the epitaxial layer (420), a pair of wells (430) of a second conductivity, opposite to the first conductivity, spaced apart from one another, formed in the epitaxial layer (420) opposite the drain, a gate area (405) formed atop the epitaxial layer (420) opposite the drain, an opening (410) through the gate area (405), and a layer (440) of the first conductivity formed in the epitaxial layer (420) under the opening (410) shorted to the gate and the pair of wells, said layer (440) is configured to decrease a resistance of a top layer within the epitaxial layer (420) between the pair of wells (430) and the layer (440).

公开(公告)号：EP2232559B1

公开(公告)日：2019-05-15

申请号：EP08833488.3

申请日：2008-09-25

Applicant: STMicroelectronics N.V.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L29/861 ,  H01L21/334 ,  H01L29/06 ,  H01L29/78

公开(公告)号：EP2240960B1

公开(公告)日：2018-03-14

申请号：EP09813383.8

申请日：2009-01-23

Applicant: STMicroelectronics N.V.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L29/78 ,  H01L29/423 ,  H02M1/38 ,  H02M1/088

CPC classification number: H01L29/7815 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/66727 ,  H01L2924/0002 ,  H02M7/06 ,  H01L2924/00

Abstract: A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.