公开(公告)号：WO2002093653A3

公开(公告)日：2002-11-21

申请号：PCT/EP2002/005336

申请日：2002-05-15

Applicant: STMICROELECTRONICS N.V. ,  RONNEBERGER, Reinhard ,  RIEVE, Peter ,  WALDER, Marcus ,  PRIMA, Jens ,  SEIBEL, Konstantin ,  SCHOLZ, Markus ,  LULE, Tarek

Inventor： RONNEBERGER, Reinhard ,  RIEVE, Peter ,  WALDER, Marcus ,  PRIMA, Jens ,  SEIBEL, Konstantin ,  SCHOLZ, Markus ,  LULE, Tarek

IPC: H01L31/0224

Abstract: Die vorliegende Erfindung betrifft ein optoelektronisches Bauelement zur Umwandlung elektromagnetischer Strahlung in einen intensitätsabhängigen Photostrom bestehend aus einem, insbesondere in CMOS-Technologie, ausgebildeten Substrat (1) mit einer integrierten Halbleiterstruktur (ASIC) und einer in Lichteinfallsrichtung vorgeordneten optisch aktiven Dünnschichtstruktur, bestehend aus einer Schicht (9) aus einem transparenten leitfähigen Material und mindestens einer Schicht (6, 7, 8) aus Halbleitermaterial, welche auf einer isolierenden Schicht (4) angeordnet sind, innerhalb der sich Verbindungsmittel (2, 3, 5) zur Kontaktierung der optisch aktiven Dünnschichtstruktur mit der auf dem Substrat angeordneten integrierten Halbleiterstruktur befinden. Zur Lösung der Aufgabe, ein optoelektronisches Bauelement der genannten Art dahingehend weiter zu entwickeln, dass die elektrische Verbindung zwischen der Schicht (9) aus transparentem leitfähigen Material und einem elektrischen Potentialanschluss (15) fertigungstechnisch auf einfache Weise hergestellt werden kann, ist vorgesehen, dass die Schicht aus transparentem leitfähigen Material durch eine zusätzlich auf dem Substrat ausgebildete leitfähige Struktur (10, 11, 12, 13) mit dem außerhalb der Bildelementeanordnung angeordneten Potentialanschluss (15) verbindbar ist.

公开(公告)号：EP1438750A1

公开(公告)日：2004-07-21

申请号：EP02782737.7

申请日：2002-10-21

Applicant: STMicroelectronics N.V.

Inventor： SCHOLZ, Markus ,  RIEVE, Peter ,  WAGNER, Michael ,  LULE, Tarek ,  SEIBEL, Konstantin ,  PRIMA, Jens ,  BENTHIEN, Stephan ,  SOMMER, Michael

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/0376

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/02162 ,  H01L31/0376 ,  Y02E10/50

Abstract: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix (6) is arranged on an ASIC switching circuit (12) provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit (12). The aim of the inventive method is to enable conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. To this end, the CMOS passivation layer (1) in the photoactive region and then the upper CMOS metallisation (2) are removed and replaced by a metallic layer (4) which is structured in the pixel raster, for the formation of back electrodes (5). The photo diode matrix (6) is then applied and structured, said photo diode matrix (6) being embodied as a pixel matrix, on which a passivating protective layer (10) and/or a colour filter layer (8) having a passivating action can be applied.

公开(公告)号：EP1451874A2

公开(公告)日：2004-09-01

申请号：EP02791607.1

申请日：2002-12-04

Applicant: STMicroelectronics N.V.

Inventor： LULE, Tarek

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14692

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology consisting of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material (11) that are configured as pixels are linked with transistor structures (33) in the crystalline ASIC (2) via back electrodes (12). The transistor structures (33) have particularly low leakage currents due to implantation technology or optimization of the production process.

公开(公告)号：EP1412987A2

公开(公告)日：2004-04-28

申请号：EP02754568.0

申请日：2002-05-15

Applicant: STMicroelectronics N.V.

Inventor： RONNEBERGER, Reinhard ,  RIEVE, Peter ,  WALDER, Marcus ,  PRIMA, Jens ,  SEIBEL, Konstantin ,  SCHOLZ, Markus ,  LULE, Tarek

IPC: H01L31/00

CPC classification number: H01L27/14636 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02164 ,  H01L31/0224 ,  H01L31/03762

Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. Said component consists of one substrate (1) which is formed especially according to CMOS technology (1). Said substrate has an integrated semiconductor structure (ASIC) and an optically active thin layer structure which is situated upstream in the direction of light incidence. Said structure consists of a layer (9) of a transparent conductive material and at least one layer (6, 7, 8) of semiconductor material, which are arranged on an isolating layer (4), inside which connection means (2, 3, 5) are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer (9) of transparent conductive material and an electric potential connection (15) can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection (15) arranged outside the pixel arrangement by means of an additional conductive structure (10, 11, 12, 13) formed on the substrate.

公开(公告)号：EP1451874B1

公开(公告)日：2007-11-14

申请号：EP02791607.1

申请日：2002-12-04

Applicant: STMicroelectronics N.V.

Inventor： LULE, Tarek

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14692

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology consisting of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material (11) that are configured as pixels are linked with transistor structures (33) in the crystalline ASIC (2) via back electrodes (12). The transistor structures (33) have particularly low leakage currents due to implantation technology or optimization of the production process.