公开(公告)号：EP2474980B1

公开(公告)日：2019-05-22

申请号：EP11195540.7

申请日：2011-12-23

Applicant: STMicroelectronics Pte Ltd.

Inventor： Le Neel, Olivier ,  Jimenez, Jean

IPC: G11C13/00 ,  G11C11/56 ,  G11C17/18 ,  H01L27/24 ,  H01L45/00 ,  H01L27/10 ,  H01L27/105 ,  H01L49/02

公开(公告)号：EP2474980A2

公开(公告)日：2012-07-11

申请号：EP11195540.7

申请日：2011-12-23

Applicant: STMicroelectronics Pte Ltd.

Inventor： Le Neel, Olivier ,  Jimenez, Jean

IPC: G11C13/00 ,  G11C11/56 ,  G11C17/18

CPC classification number: G11C13/0069 ,  G11C11/5692 ,  G11C17/18 ,  G11C2013/008 ,  G11C2213/33 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2481 ,  H01L28/20 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/14 ,  H01L45/148

Abstract: An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has an adjustable resistor and a heating element. A dielectric material separates the heating element from the adjustable resistor. The heating element alters the resistance of the resistor by applying heat thereto. The magnitude of the resistance of the adjustable resistor represents the value of data stored in the memory cell.

Abstract translation: 形成集成电路，其具有位于半导体衬底上方的电介质堆叠中的存储器单元的阵列。 每个存储单元具有可调电阻器和加热元件。 电介质材料将加热元件与可调电阻器分开。 加热元件通过向其施加热量来改变电阻器的电阻。 可调电阻器的电阻的大小表示存储在存储单元中的数据的值。

公开(公告)号：EP2474980A3

公开(公告)日：2014-04-09

申请号：EP11195540.7

申请日：2011-12-23

Applicant: STMicroelectronics Pte Ltd.

Inventor： Le Neel, Olivier ,  Jimenez, Jean

IPC: G11C13/00 ,  G11C11/56 ,  G11C17/18

CPC classification number: G11C13/0069 ,  G11C11/5692 ,  G11C17/18 ,  G11C2013/008 ,  G11C2213/33 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2481 ,  H01L28/20 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/14 ,  H01L45/148

Abstract: An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has an adjustable resistor and a heating element. A dielectric material separates the heating element from the adjustable resistor. The heating element alters the resistance of the resistor by applying heat thereto. The magnitude of the resistance of the adjustable resistor represents the value of data stored in the memory cell.