公开(公告)号：EP2423950B1

公开(公告)日：2020-04-15

申请号：EP11178597.8

申请日：2011-08-24

Applicant: STMicroelectronics Pte Ltd. ,  STMicroelectronics, Inc.

Inventor： Lim, Ting Fang ,  Niu, Chengyu ,  Le Neel, Olivier ,  Leung, Calvin

IPC: H01C1/148 ,  H01L49/02 ,  H01L23/522 ,  H01L23/64 ,  H01L21/768 ,  H01C7/00

公开(公告)号：EP2423950A3

公开(公告)日：2013-05-01

申请号：EP11178597.8

申请日：2011-08-24

Applicant: STMicroelectronics Pte Ltd. ,  STMicroelectronics, Inc.

Inventor： Lim, Ting Fang ,  Niu, Chengyu ,  Le Neel, Olivier ,  Leung, Calvin

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/64 ,  H01L21/768 ,  H01C7/00

Abstract: The present disclosure is directed to a thin film resistor structure (100) that includes a resistive element (102) electrically connecting first conductor layers (106a,b) of adjacent interconnect structures (104a,b). The resistive element is covered by a dielectric cap layer (105) that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer (124) over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.

公开(公告)号：EP2423950A2

公开(公告)日：2012-02-29

申请号：EP11178597.8

申请日：2011-08-24

Applicant: STMicroelectronics Pte Ltd. ,  STMicroelectronics Inc

Inventor： Lim, Ting Fang ,  Niu, Chengyu ,  Le Neel, Olivier ,  Leung, Calvin

IPC: H01L21/02 ,  H01L23/522 ,  H01L23/64

Abstract: The present disclosure is directed to a thin film resistor structure (100) that includes a resistive element (102) electrically connecting first conductor layers (106a,b) of adjacent interconnect structures (104a,b). The resistive element is covered by a dielectric cap layer (105) that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer (124) over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.

Abstract translation: 本发明涉及的薄膜电阻器结构（100）包括一电阻性元件那样（102），其电连接第一导体层（106A，B）相邻的互连结构（104A，B）。 所述电阻元件由介电覆盖层覆盖（105）确实用作稳定剂和散热器为电阻元件。 每个互连件包括在所述第一导电层的第二导体层（124）。 薄膜电阻器包括由硅氮化物帽层覆盖的硅铬电阻元件。