公开(公告)号：EP1662660A3

公开(公告)日：2007-12-12

申请号：EP05025953.0

申请日：2005-11-29

Applicant: STMicroelectronics Pvt. Ltd

Inventor： Gupta, Sushil Kumar ,  Garg, Paras

IPC: H03K19/003 ,  H03K3/011 ,  H03K17/14

CPC classification number: H03K3/011 ,  H03K3/3565 ,  H03K17/145 ,  H03K19/00384

Abstract: In the present invention an apparatus and method for providing compensation against temperature, process and supply voltage variation in MOS circuits has been proposed. The invention provides a change in process, temperature and voltage detection circuit, which controls the body bias and the drive of the devices in the CMOS circuit. The detection circuit is independent of any input or internal signal of the CMOS circuit to be controlled.

公开(公告)号：EP1662660A2

公开(公告)日：2006-05-31

申请号：EP05025953.0

申请日：2005-11-29

Applicant: STMicroelectronics Pvt. Ltd

Inventor： Gupta, Sushil Kumar ,  Garg, Paras

IPC: H03K19/003

CPC classification number: H03K3/011 ,  H03K3/3565 ,  H03K17/145 ,  H03K19/00384

Abstract: In the present invention an apparatus and method for providing compensation against temperature, process and supply voltage variation in MOS circuits has been proposed. The invention provides a change in process, temperature and voltage detection circuit, which controls the body bias and the drive of the devices in the CMOS circuit. The detection circuit is independent of any input or internal signal of the CMOS circuit to be controlled.

Abstract translation: 在本发明的装置和方法，用于提供相对于温度，工艺和MOS电路的电源电压变化补偿已经提出。 本发明提供在过程中，温度和电压检测电路，其控制体偏置并在CMOS电路中的器件的驱动的变化。 检测电路是独立的要被控制的CMOS电路中的任何输入或内部信号。