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1.发明授权SUPPORT POUR RESONATEUR ACOUSTIQUE, RESONATEUR ACOUSTIQUE ET CIRCUIT INTEGRE CORRESPONDANT 有权支持FOR声波谐振器，声波谐振器及相关集成电路
公开(公告)号：EP1568129B1
公开(公告)日：2006-06-14
申请号：EP03789511.7
申请日：2003-11-27
Applicant: STMicroelectronics S.A.
Inventor： BOUCHE, Guillaume , CARUYER, Grégory , ANCEY, Pascal
IPC: H03H9/05
CPC classification number: H03H9/175
Abstract: The invention relates to a support (7) for an acoustic resonator (4), comprising at least one double layer assembly consisting of one layer of a high acoustic impedance material (11) and one layer of a low acoustic impedance material (12) which is made from a material with low electric permittivity.
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2.发明公开SUPPORT POUR RESONATEUR ACOUSTIQUE, RESONATEUR ACOUSTIQUE ET CIRCUIT INTEGRE CORRESPONDANT 有权支持FOR声波谐振器，声波谐振器及相关集成电路
公开(公告)号：EP1568129A1
公开(公告)日：2005-08-31
申请号：EP03789511.7
申请日：2003-11-27
Applicant: STMicroelectronics S.A.
Inventor： BOUCHE, Guillaume , CARUYER, Grégory , ANCEY, Pascal
IPC: H03H9/05
CPC classification number: H03H9/175
Abstract: The invention relates to a support (7) for an acoustic resonator (4), comprising at least one double layer assembly consisting of one layer of a high acoustic impedance material (11) and one layer of a low acoustic impedance material (12) which is made from a material with low electric permittivity.
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