公开(公告)号：EP3637571A1

公开(公告)日：2020-04-15

申请号：EP19198276.8

申请日：2019-09-19

Applicant: STMicroelectronics S.r.l.

Inventor： TORRISI, Giovanni Luca ,  ABBISSO, Salvatore ,  MERONI, Cristiano

IPC: H02H3/20 ,  H02M1/32 ,  H02H5/04 ,  H02H7/12 ,  H02H1/00 ,  H02H3/04

Abstract: A circuit (10), such as a voltage regulator, comprises an output node (Vo) configured to supply a regulated voltage signal to a supplied load (MCU). The circuit comprises processing circuitry such as a state machine (12) sensitive to the regulated voltage at the output node (Vo) and to a temperature (T) of the circuit (10). The processing circuit is configured to provide voltage and temperature sensing signals indicative of the regulated voltage at the output node (Vo) and the temperature (T) of the circuit (10) and to assume:
- i) a first state, as a result of the voltage sensing signal reaching a voltage threshold,
- ii) a second state, as a result of the temperature detection signal (T) reaching a temperature threshold,
- iii) a third state, as a result of both the voltage and the temperature sensing signals failing to reach said thresholds.
The circuit (10) comprises a warning output (A_TW) configured to be driven in a first, second and third drive mode as a result of the processing circuitry (12) being in the first, second and third state, respectively.

公开(公告)号：EP4345464A1

公开(公告)日：2024-04-03

申请号：EP23196500.5

申请日：2023-09-11

Applicant: STMicroelectronics S.r.l.

Inventor： DE VITA, Placido ,  ABBISSO, Salvatore ,  TORRISI, Giovanni Luca ,  LEONE, Antonio Davide

IPC: G01R1/20 ,  G01R1/44 ,  G01R19/00

Abstract: Described herein is a method for sensing at a pre-driving stage (12) driving one or more Field Effect Transistor (MHx, MLx), in particular MOSFET, comprised in a power stage (13) driving a load (DC1...DC4), a current flowing in said Field Effect Transistor (MHx, MLx), in particular MOSFET, the Field Effect Transistor being arranged external with respect to a chip on which said pre-driving stage (12) is arranged,
said method comprising
measuring (120) a drain to source voltage (VDS_HSx, VDS_LSx), of said one or more Field Effect Transistor (MHX, MLx),
measuring (130) an operating temperature (T W ) of said one or more Field Effect Transistor (MHX, MLx),
measuring (140) a current (IHX, ILx) flowing in said one or more Field Effect Transistor (MHX, MLx) by
calculating (142) the respective on drain to source resistance at the operating temperature (RdsONx(T W )) as a function (RdsONx(T W )) of said measured operating temperature (T W ) and by obtaining (144) said current (IHX, ILx) as the ratio of the respective measured drain to source voltage (VDS_HSx, VDS_LSx) over said calculated drain to source resistance at the operating temperature (RdsONx(T W )).