Abstract:
Various embodiments provide a triaxial magnetic sensor, formed on or in a substrate of semiconductor material having a surface that includes a sensing portion and at least one first and one second sensing wall, which are not coplanar to each other. The sensing portion and the first sensing wall form a first solid angle, the sensing portion and the second sensing wall form a second solid angle, and the first sensing wall and the second sensing wall form a third solid angle. A first Hall-effect magnetic sensor extends at least partially over the sensing portion, a second Hall-effect magnetic sensor extends at least partially over the first sensing wall, and a third Hall-effect magnetic sensor extends at least partially over the second sensing wall.
Abstract:
A sensing structure is presented for use in testing integrated circuits on a substrate. The sensing structure includes a probe region corresponding to a conductive region for connecting to the integrated circuit. A first sensing region at least partially surrounds the probe region. A plurality of sensing elements connects in series such that a first of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the probe region. And a second of the plurality of sensing elements has two terminals respectively connected to the probe region and a first reference potential.
Abstract:
A smart button for use in a network formed on a garment includes a housing and an antenna carried within the housing to communicate with elements of the network. A functional element is carried within the housing. An electronic circuit is carried within the housing and coupled to the antenna and the at least one functional element. The housing is formed by a stem carrying a head, and the antenna is housed within the head.
Abstract:
A microelectromechanical sensing structure having a membrane region including a membrane that undergoes deformation as a function of a pressure and a first actuator that is controlled in a first operating mode and a second operating mode, the first actuator being such that, when it operates in the second operating mode, it contacts the membrane region and deforms the membrane in a way different from when it operates in the first operating mode.
Abstract:
A base carries a first chip and a second chip oriented differently with respect to the base and packaged in a package. Each chip integrates an antenna and a magnetic via. A magnetic coupling path connects the chips, forming a magnetic circuit that enables transfer of signals and power between the chips even if the magnetic path is interrupted, and is formed by a first stretch coupled between the first magnetic-coupling element of the first chip and the first magnetic-coupling element of the second chip, and a second stretch coupled between the second magnetic-coupling element of the first chip and the second magnetic-coupling element of the second chip. The first stretch has a parallel portion extending parallel to the faces of the base. The first and second stretches have respective transverse portions extending on the main surfaces of the second chip, transverse to the parallel portion.
Abstract:
An inertial sensor having a body with an excitation coil and a first sensing coil extending along a first axis. A suspended mass includes a magnetic-field concentrator, in a position corresponding to the excitation coil, and configured for displacing by inertia in a plane along the first axis. A supply and sensing circuit is electrically coupled to the excitation coil and to the first sensing coil, and is configured for generating a time-variable flow of electric current that flows in the excitation coil so as to generate a magnetic field that interacts with the magnetic-field concentrator to induce a voltage/current in the sensing coil. The integrated circuit is configured for measuring a value of the voltage/current induced in the first sensing coil so as to detect a quantity associated to the displacement of the suspended mass along the first axis.
Abstract:
An IC may include a semiconductor substrate having circuitry formed in the substrate, an interconnect layer above the semiconductor substrate and having an antenna coupled to the circuitry, and a seal ring around a periphery of the interconnect layer. The IC may include an electrically insulating trench extending vertically into the semiconductor substrate and extending laterally across the semiconductor substrate from adjacent one side to adjacent another side.
Abstract:
Embodiments are directed to electrically confined ballistic devices, circuits, and networks. One such device includes a heterostructure that has a first semiconductor layer, a second semiconductor layer, and a two-dimensional electrode gas (2DEG) layer between the first and second semiconductor layers. The device further includes an input electrode electrically coupled to the 2DEG layer and an output electrode electrically coupled to the 2DEG layer. A first confinement electrode is positioned on the heterostructure. The first confinement electrode, in use, generates first space charge regions which at least partially define a boundary of the ballistic device within the 2DEG layer between the input electrode and the output electrode in response to a first voltage.
Abstract:
A device includes a particle propagation channel, a particle deflector, a particle source, and a particle sink. The particle deflector facilitates ballistic transport of particles from a particle inflow portion through a particle flow deflection portion to a particle outflow portion. The particle deflector is arranged at the particle flow deflection portion and is activatable to deflect particles in the flow deflection portion and is configured to selectively prevent the particles from reaching the particle outflow portion. The particle source and particle sink are configured to cause a current path of the particles through the device.
Abstract:
A microelectromechanical sensing structure having a membrane region including a membrane that undergoes deformation as a function of a pressure and a first actuator that is controlled in a first operating mode and a second operating mode, the first actuator being such that, when it operates in the second operating mode, it contacts the membrane region and deforms the membrane in a way different from when it operates in the first operating mode.