TRIAXIAL MAGNETIC SENSOR FOR MEASURING MAGNETIC FIELDS, AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:US20200371169A1

    公开(公告)日:2020-11-26

    申请号:US16880807

    申请日:2020-05-21

    Abstract: Various embodiments provide a triaxial magnetic sensor, formed on or in a substrate of semiconductor material having a surface that includes a sensing portion and at least one first and one second sensing wall, which are not coplanar to each other. The sensing portion and the first sensing wall form a first solid angle, the sensing portion and the second sensing wall form a second solid angle, and the first sensing wall and the second sensing wall form a third solid angle. A first Hall-effect magnetic sensor extends at least partially over the sensing portion, a second Hall-effect magnetic sensor extends at least partially over the first sensing wall, and a third Hall-effect magnetic sensor extends at least partially over the second sensing wall.

    ELECTRICALLY CONFINED BALLISTIC DEVICES AND METHODS

    公开(公告)号:US20200321457A1

    公开(公告)日:2020-10-08

    申请号:US16376482

    申请日:2019-04-05

    Abstract: Embodiments are directed to electrically confined ballistic devices, circuits, and networks. One such device includes a heterostructure that has a first semiconductor layer, a second semiconductor layer, and a two-dimensional electrode gas (2DEG) layer between the first and second semiconductor layers. The device further includes an input electrode electrically coupled to the 2DEG layer and an output electrode electrically coupled to the 2DEG layer. A first confinement electrode is positioned on the heterostructure. The first confinement electrode, in use, generates first space charge regions which at least partially define a boundary of the ballistic device within the 2DEG layer between the input electrode and the output electrode in response to a first voltage.

    BALLISTIC TRANSPORT DEVICE AND CORRESPONDING COMPONENT

    公开(公告)号:US20190312136A1

    公开(公告)日:2019-10-10

    申请号:US16377080

    申请日:2019-04-05

    Abstract: A device includes a particle propagation channel, a particle deflector, a particle source, and a particle sink. The particle deflector facilitates ballistic transport of particles from a particle inflow portion through a particle flow deflection portion to a particle outflow portion. The particle deflector is arranged at the particle flow deflection portion and is activatable to deflect particles in the flow deflection portion and is configured to selectively prevent the particles from reaching the particle outflow portion. The particle source and particle sink are configured to cause a current path of the particles through the device.

    MICROELECTROMECHANICAL SENSING STRUCTURE FOR A PRESSURE SENSOR INCLUDING A DEFORMABLE TEST STRUCTURE
    10.
    发明申请
    MICROELECTROMECHANICAL SENSING STRUCTURE FOR A PRESSURE SENSOR INCLUDING A DEFORMABLE TEST STRUCTURE 有权
    用于压力传感器的微电子感应传感结构,包括可变形测试结构

    公开(公告)号:US20150260597A1

    公开(公告)日:2015-09-17

    申请号:US14656391

    申请日:2015-03-12

    Inventor: Alberto PAGANI

    CPC classification number: G01L9/0054 G01L9/0052 G01L27/002 Y10T29/42

    Abstract: A microelectromechanical sensing structure having a membrane region including a membrane that undergoes deformation as a function of a pressure and a first actuator that is controlled in a first operating mode and a second operating mode, the first actuator being such that, when it operates in the second operating mode, it contacts the membrane region and deforms the membrane in a way different from when it operates in the first operating mode.

    Abstract translation: 一种微机电传感结构,其具有包括作为压力的函数变形的膜的膜区域和被控制在第一操作模式和第二操作模式的第一致动器,所述第一致动器使得当其在 第二操作模式,其接触膜区域并使膜以与第一操作模式中的操作不同的方式变形。

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