公开(公告)号：EP1677372A1

公开(公告)日：2006-07-05

申请号：EP04107071.5

申请日：2004-12-30

Applicant: STMicroelectronics S.r.l.

Inventor： Karpov, Ilya V. ,  Kuo, Charles C. ,  Kim, Yudong ,  Atwood, Greg

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/04 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1683

Abstract: Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreo ver, delamination problems are avoided. A lance material (30) is formed within the same via (31) with the memory element (40, 130). In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer (28); in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide (40) used to form a memory element (130) and the lance material (30) is achieved by providing a pin hole opening in a dielectric (34), which separates the chalcogenide and the lance material.

Abstract translation: 在电介质（18,22）内的通孔内形成硫族化物选择装置（24,120）和硫族化物存储元件（40,130）。 结果，硫属元素被有效地捕获在通孔内，并且不需要胶或粘合层。 更重要的是，避免了分层问题。 在与存储元件（40,130）相同的通孔（31）内形成喷枪材料（30）。 在一个实施例中，由于侧壁间隔件（28）的存在，喷枪材料制成更薄; 在另一个实施例中，没有使用侧壁间隔物。 用于形成存储元件（130）的硫族化物（40）与喷枪材料（30）之间的相对较小的接触面积是通过在电介质（34）中设置一个针孔开口来实现的，该电极隔开硫族化物和喷枪 材料。

公开(公告)号：EP1677372B1

公开(公告)日：2008-05-14

申请号：EP04107071.5

申请日：2004-12-30

Applicant: STMicroelectronics S.r.l.

Inventor： Karpov, Ilya V. ,  Kuo, Charles C. ,  Kim, Yudong ,  Atwood, Greg

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/04 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1683

公开(公告)号：EP1677371A1

公开(公告)日：2006-07-05

申请号：EP04107070.7

申请日：2004-12-30

Applicant: STMicroelectronics S.r.l.

Inventor： Kim, Yudong ,  Karpov, Ilya V. ,  Kuo, Charles C. ,  Atwood, Greg ,  Marangon, Maria Santina ,  Lowrey, Tyler

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/1683

Abstract: A dual resistance heater (24) for a phase change material region (28) is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface (26) of the heater material relative to the remainder (27) of the heater material. As a result, the portion (26) of the heater material approximate to the phase change material region (28) is a highly effective heater because of its high resistance, but the bulk (27) of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

Abstract translation: 通过沉积电阻材料形成用于相变材料区域（28）的双电阻加热器（24）。 然后将加热器材料暴露于植入或等离子体，这增加了加热器材料的表面（26）相对于加热器材料的剩余部分（27）的电阻。 结果，加热器材料的部分（26）由于其高电阻而接近于相变材料区域（28）是高效的加热器，但是加热器材料的体积（27）不是电阻的， 因此，不会增加设备的电压降和当前的使用。