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    Phase change memory and manufacturing method thereof
    3.
    发明公开
    Phase change memory and manufacturing method thereof 有权
    Phasenwechselspeicher und Herstellungsmethodedafür

    公开(公告)号：EP1677372A1

    公开(公告)日：2006-07-05

    申请号：EP04107071.5

    申请日：2004-12-30

    Applicant: STMicroelectronics S.r.l.

    Inventor： Karpov, Ilya V. ,  Kuo, Charles C. ,  Kim, Yudong ,  Atwood, Greg

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/04 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1683

    Abstract: Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreo ver, delamination problems are avoided. A lance material (30) is formed within the same via (31) with the memory element (40, 130). In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer (28); in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide (40) used to form a memory element (130) and the lance material (30) is achieved by providing a pin hole opening in a dielectric (34), which separates the chalcogenide and the lance material.

    Abstract translation: 在电介质（18,22）内的通孔内形成硫族化物选择装置（24,120）和硫族化物存储元件（40,130）。 结果，硫属元素被有效地捕获在通孔内，并且不需要胶或粘合层。 更重要的是，避免了分层问题。 在与存储元件（40,130）相同的通孔（31）内形成喷枪材料（30）。 在一个实施例中，由于侧壁间隔件（28）的存在，喷枪材料制成更薄; 在另一个实施例中，没有使用侧壁间隔物。 用于形成存储元件（130）的硫族化物（40）与喷枪材料（30）之间的相对较小的接触面积是通过在电介质（34）中设置一个针孔开口来实现的，该电极隔开硫族化物和喷枪 材料。

    Semiconductor structure, in particular phase change memory device having a uniform height heater
    5.
    发明公开
    Semiconductor structure, in particular phase change memory device having a uniform height heater 有权
    一种用于制造具有均匀Heizelementhöhe的相变存储器阵列处理

    公开(公告)号：EP1764837A1

    公开(公告)日：2007-03-21

    申请号：EP05108414.3

    申请日：2005-09-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Karpov, Ilya ,  Kim, Yudong ,  Jin, Ming ,  Teegapuram, Shyam Prasad ,  Lee, Jinwook

    IPC: H01L27/24

    CPC classification number: H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126

    Abstract: A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region (28) extending over an own heater (26). The heaters (26) have all a relatively uniform height. The height uniformity is achieved by forming the heaters within pores in an insulator that includes an etch stop layer (18) and a sacrificial layer (24). The sacrificial layer is removed through an etching process such as chemical mechanical planarization. Since the etch stop layer may be formed in a repeatable way and is common across all the devices on a wafer, considerable uniformity is achieved in heater height. Heater height uniformity results in more uniformity in programmed memory characteristics.

    Abstract translation: 一种相变存储器由具有硫族化物存储区域（28）的相变存储器件的形成的多个扩展到自己的加热器（26）。 加热器（26）都相对一致的高度。 高度的均匀性是通过形成加热器取得内孔在绝缘体上包括做蚀刻停止层（18）和牺牲层（24）。 如化学机械平面化：该牺牲层是通过蚀刻工艺去除。 由于蚀刻停止层可以以重复的方式形成，并且是在所有设备共同的晶片上，相当大的均匀性在加热器高度来实现的。 加热器高度均匀性导致更多的均匀性在编程的存储器特性。

    Dual resistance heater for phase change devices and manufacturing method thereof
    6.
    发明公开
    Dual resistance heater for phase change devices and manufacturing method thereof 审中-公开
    Zweiteiliger WiderstandsheiserfürPhasenwechselspeicher und Herstellungsmethode

    公开(公告)号：EP1677371A1

    公开(公告)日：2006-07-05

    申请号：EP04107070.7

    申请日：2004-12-30

    Applicant: STMicroelectronics S.r.l.

    Inventor： Kim, Yudong ,  Karpov, Ilya V. ,  Kuo, Charles C. ,  Atwood, Greg ,  Marangon, Maria Santina ,  Lowrey, Tyler

    IPC: H01L45/00

    CPC classification number: H01L45/16 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/1683

    Abstract: A dual resistance heater (24) for a phase change material region (28) is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface (26) of the heater material relative to the remainder (27) of the heater material. As a result, the portion (26) of the heater material approximate to the phase change material region (28) is a highly effective heater because of its high resistance, but the bulk (27) of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

    Abstract translation: 通过沉积电阻材料形成用于相变材料区域（28）的双电阻加热器（24）。 然后将加热器材料暴露于植入或等离子体，这增加了加热器材料的表面（26）相对于加热器材料的剩余部分（27）的电阻。 结果，加热器材料的部分（26）由于其高电阻而接近于相变材料区域（28）是高效的加热器，但是加热器材料的体积（27）不是电阻的， 因此，不会增加设备的电压降和当前的使用。

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