公开(公告)号：EP3364166B1

公开(公告)日：2020-02-05

申请号：EP18156816.3

申请日：2018-02-14

Applicant: STMicroelectronics S.r.l.

Inventor： ABBASI GAVARTI, Mohammad ,  CALTABIANO, Daniele ,  PICCO, Andrea ,  POMARICO, Anna Angela ,  ROSELLI, Giuditta ,  BRAGHIN, Francesco

IPC: G01L9/00 ,  B81B7/00 ,  G01L9/06 ,  G01L19/14 ,  G01L1/18 ,  G01L1/26

公开(公告)号：EP3421959A1

公开(公告)日：2019-01-02

申请号：EP18178963.7

申请日：2018-06-21

Applicant: STMicroelectronics S.r.l.

Inventor： ABBASI GAVARTI, Mohammad ,  CALTABIANO, Daniele ,  BRAGHIN, Francesco

IPC: G01L5/16 ,  G01L1/26 ,  G01L1/18 ,  G01L1/22

Abstract: A microelectromechanical transducer (1), comprising: a semiconductor body (2), having a first surface (2a) and a second surface (2b) opposite to one another; a plurality of trenches (4) extending in the semiconductor body (2) from the first surface (2a) towards the second surface (2b), including a first pair of trenches (4a) having a respective main direction of extension along a first axis (x), and a second pair of trenches (4b) having a respective main direction of extension along a second axis (y) orthogonal to the first axis; a first piezoresistive sensor (6a) and a second piezoresistive sensor (6b) extending at the first surface (2a) of the semiconductor body (2), respectively arranged between said first and second pair of trenches (4a, 4b), wherein the first piezoresistive sensor (6a), the second piezoresistive sensor (6b) and the plurality of trenches (4) form an active region (7a, 7b); and a first structural body (8), mechanically coupled to the first surface (2a) of the semiconductor body (2) in such a way to form a first sealed cavity (10) which encloses the active region.

公开(公告)号：EP3364166A1

公开(公告)日：2018-08-22

申请号：EP18156816.3

申请日：2018-02-14

Applicant: STMicroelectronics S.r.l.

Inventor： ABBASI GAVARTI, Mohammad ,  CALTABIANO, Daniele ,  PICCO, Andrea ,  POMARICO, Anna Angela ,  ROSELLI, Giuditta ,  BRAGHIN, Francesco

IPC: G01L9/00 ,  B81B7/00 ,  G01L9/06 ,  G01L19/14 ,  G01L1/18 ,  G01L1/26

CPC classification number: G01L1/18 ,  G01L1/26 ,  G01L9/0002 ,  G01L9/06 ,  G01L19/146 ,  H01C10/10 ,  H01C17/00

Abstract: A microelectromechanical force/pressure sensor (1) has: a sensor die (2), of semiconductor material, having a front surface (2a) and a bottom surface (2b), extending in a horizontal plane (xy), and made of a compact bulk region having a thickness along a vertical direction (z), transverse to the horizontal plane (xy); piezoresistive elements (6), integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die (8), coupled above the sensor die, covering the piezoresistive elements, having a respective front surface (8a) and bottom surface (8b), opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer (4) is arranged between the front surface (2a) of the sensor die (2) and the bottom surface (8b) of the cap die (8), patterned to define a groove (5) traversing its entire thickness along the vertical direction; the piezoresistive elements (6) are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied from the front surface of the cap die and/or bottom surface of the sensor die into a planar stress distribution at the groove, acting in the horizontal plane.