MICROELECTROMECHANICAL SCALABLE BULK-TYPE PIEZORESISTIVE FORCE/PRESSURE SENSOR

    公开(公告)号:EP3364166A1

    公开(公告)日:2018-08-22

    申请号:EP18156816.3

    申请日:2018-02-14

    Abstract: A microelectromechanical force/pressure sensor (1) has: a sensor die (2), of semiconductor material, having a front surface (2a) and a bottom surface (2b), extending in a horizontal plane (xy), and made of a compact bulk region having a thickness along a vertical direction (z), transverse to the horizontal plane (xy); piezoresistive elements (6), integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die (8), coupled above the sensor die, covering the piezoresistive elements, having a respective front surface (8a) and bottom surface (8b), opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer (4) is arranged between the front surface (2a) of the sensor die (2) and the bottom surface (8b) of the cap die (8), patterned to define a groove (5) traversing its entire thickness along the vertical direction; the piezoresistive elements (6) are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied from the front surface of the cap die and/or bottom surface of the sensor die into a planar stress distribution at the groove, acting in the horizontal plane.

    TRENCH-BASED MICROELECTROMECHANICAL TRANSDUCER AND METHOD FOR MANUFACTURING THEREOF

    公开(公告)号:EP3396344A1

    公开(公告)日:2018-10-31

    申请号:EP18163456.9

    申请日:2018-03-22

    Abstract: A microelectromechanical transducer (1; 20; 30; 50), comprising: a semiconductor body (2), having a first surface (2a) and a second surface (2b) opposite to one another; a first structural body (8), coupled to the first surface (2a) of the semiconductor body (2); a first sealed cavity (10) between the semiconductor body (2) and the first structural body (8); and an active area (7) housed in the first sealed cavity (10), including at least two trenches (4; 34) and a sensor element (6a-6d; 60) between the trenches (4; 34). The trenches (4; 34) extend along a vertical direction (Z) from the first surface (2a) towards the second surface (2b) of the semiconductor body (2).

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