公开(公告)号：EP1067599B1

公开(公告)日：2007-09-12

申请号：EP99830442.2

申请日：1999-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Villa, Flavio ,  Barlocchi Gabriele

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/20

CPC classification number: H01L21/76208 ,  H01L21/763

公开(公告)号：EP1067599A1

公开(公告)日：2001-01-10

申请号：EP99830442.2

申请日：1999-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Villa, Flavio ,  Barlocchi Gabriele

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/20

CPC classification number: H01L21/76208 ,  H01L21/763

Abstract: A monocrystalline silicon substrate (2) is subjected to the following operations:

implantation of doping impurities in a high concentration to form a planar region (42) of a first type (n),
selective anisotropic etching in order to hollow out trenches to a depth greater than the depth of the planar region (42),
oxidation of the silicon inside the trenches starting a certain distance from the surface of the substrate, until a silicon dioxide plaque (22) is formed, surmounted by residues of strongly-doped silicon,
epitaxial growth between and on top of the silicon residues to close the trenches and to bring about a redistribution of the doping impurities into the silicon grown to produce a buried region (42') with low resistivity in an epitaxial layer (23) of high resistivity.

Abstract translation: 将单晶硅基片（2）进行以下操作：在高浓度掺杂杂质的注入，形成第一类型的（一个或多个），选择性的各向异性蚀刻的平面区域（42），以便挖空沟槽的深度 比平面区域的深度（42）时，开始从所述基片的表面有一定的距离的沟槽内的硅，直到二氧化硅斑块（22）形成，由强掺杂硅的残基超越的氧化， 之间和在硅残基的顶部外延生长以关闭所述沟槽和带来的再分布的掺杂杂质的进入生长以产生具有低电阻率的埋入区（42“）在高电阻率的外延层（23）上的硅 ，