公开(公告)号：EP1156528B1

公开(公告)日：2006-08-30

申请号：EP00830337.2

申请日：2000-05-08

Applicant: STMicroelectronics S.r.l.

Inventor： Lo Verde, Domenico ,  Bruno, Giuseppe

IPC: H01L23/58

CPC classification number: H01L23/585 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2224/45099

公开(公告)号：EP1156528A1

公开(公告)日：2001-11-21

申请号：EP00830337.2

申请日：2000-05-08

Applicant: STMicroelectronics S.r.l.

Inventor： Lo Verde, Domenico ,  Bruno, Giuseppe

IPC: H01L23/58

CPC classification number: H01L23/585 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2224/45099

Abstract: On a semiconductor material body (15) housing an electronic device (3) a peripheral region (22) of semiconductor material and at least one pad (20, 21) are initially formed. The peripheral region (22) is connected to a first terminal of the electronic device (3) and extends on at least one peripheral portion of the semiconductor material body (15). The pad (20, 21) is insulated from the semiconductor material body and is electrically connected to a second terminal of the electronic device (3). The semiconductor material body (15) is fixed to a support body (10) formed by a blank (5) belonging to a reel (1). The pad (20, 21) is connected by a wire (24) to an electrode (11, 12) formed by the blank (5). Next, a connection region (25a) is formed on the peripheral region (22) and surrounds, at least partially, the semiconductor material body (15) and the support body (10). The connection region (25a) is advantageously obtained by galvanic growth.

Abstract translation: 首先，在容纳电子器件（3）的半导体材料体（15）上，形成半导体材料的外围区域（22）和至少一个焊盘（20,21）。 外围区域（22）连接到电子设备（3）的第一端子并且在半导体材料体（15）的至少一个周边部分上延伸。 焊盘（20,21）与半导体材料体绝缘并且电连接到电子器件（3）的第二端子。 半导体材料体（15）固定在由属于卷轴（1）的坯件（5）形成的支撑体（10）上。 焊盘（20,21）通过导线（24）连接到由坯料（5）形成的电极（11,12）。 接下来，在周边区域（22）上形成连接区域（25a），至少部分地包围半导体材料体（15）和支撑体（10）。 连接区域（25a）有利地通过电生长获得。