公开(公告)号：EP3836228A1

公开(公告)日：2021-06-16

申请号：EP20211345.2

申请日：2020-12-02

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/778 ,  H01L21/338 ,  H01L29/41 ,  H01L29/423 ,  H01L29/20

Abstract: HEMT transistor (50; 100; 150) having a semiconductor body (52) forming a semiconductive heterostructure (54, 56); a gate region (60), of conductive material, arranged above and in contact with the semiconductor body (52); a first insulating layer (58) extending above the semiconductor body, laterally to the conductive gate region (60); a second insulating layer (62) extending above the first insulating layer (58) and the gate region (60); a first field plate region (84), of conductive material, extending between the first and the second insulating layers (58), laterally spaced from the conductive gate region (60); and a second field plate region (85), of conductive material, extending above the second insulating layer (62), vertically aligned with the first field plate region (84).

公开(公告)号：EP4092756A3

公开(公告)日：2023-02-22

申请号：EP22184384.0

申请日：2018-06-08

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/778 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/20 ,  H01L29/423 ,  H01L29/207

Abstract: HEMT (1; 21; 31; 51) including a buffer layer (4), a hole-supply layer (6) on the buffer layer (4), a heterostructure (7) on the hole-supply layer (6), and a source electrode (16). The hole-supply layer (6) is made of P-type doped semiconductor material, the buffer layer (4) is doped with carbon, and the source electrode (16) is in direct electrical contact with the hole-supply layer (6), such that the hole-supply layer (6) can be biased to facilitate the transport of holes from the hole-supply layer (6) to the buffer layer (4) .

公开(公告)号：EP4239686A1

公开(公告)日：2023-09-06

申请号：EP23159048.0

申请日：2023-02-28

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/778 ,  H01L21/338 ,  H01L21/336 ,  H01L29/423 ,  H01L29/417 ,  H01L29/20

Abstract: The HEMT device (50) is formed by a heterostructure (62), by an insulation layer (68) that extends on the heterostructure and has a thickness along a first direction (Z), and by a gate region (74). The gate region has a first portion (74A) that extends through the insulation layer, throughout the thickness of the insulation layer, and has a second portion (74B) that extends in the heterostructure. The first portion of the gate region has a first width (Lw) along a second direction (X) transverse to the first direction. The second portion of the gate region has a second width (Lb), along the second direction, that is different from the first width.

公开(公告)号：EP4092756A2

公开(公告)日：2022-11-23

申请号：EP22184384.0

申请日：2018-06-08

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/778 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/20 ,  H01L29/423 ,  H01L29/207

Abstract: HEMT (1; 21; 31; 51) including a buffer layer (4), a hole-supply layer (6) on the buffer layer (4), a heterostructure (7) on the hole-supply layer (6), and a source electrode (16). The hole-supply layer (6) is made of P-type doped semiconductor material, the buffer layer (4) is doped with carbon, and the source electrode (16) is in direct electrical contact with the hole-supply layer (6), such that the hole-supply layer (6) can be biased to facilitate the transport of holes from the hole-supply layer (6) to the buffer layer (4) .

公开(公告)号：EP3413352A1

公开(公告)日：2018-12-12

申请号：EP18176875.5

申请日：2018-06-08

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/778 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/207 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/0847 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786

Abstract: HEMT (1; 21; 31; 51) including a buffer layer (4), a hole-supply layer (6) on the buffer layer (4), a heterostructure (7) on the hole-supply layer (6), and a source electrode (16). The hole-supply layer (6) is made of P-type doped semiconductor material, the buffer layer (4) is doped with carbon, and the source electrode (16) is in direct electrical contact with the hole-supply layer (6), such that the hole-supply layer (6) can be biased to facilitate the transport of holes from the hole-supply layer (6) to the buffer layer (4).

公开(公告)号：EP3252825A1

公开(公告)日：2017-12-06

申请号：EP16425047.4

申请日：2016-05-30

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7786

Abstract: An HEMT device (1), comprising: a semiconductor body (15) including a heterojunction structure (13); a dielectric layer (7) on the semiconductor body; a gate electrode (8); a drain electrode (12), facing a first side (8') of the gate electrode (8); and a source electrode (10), facing a second side (8") opposite to the first side (8') of the gate electrode; an auxiliary channel layer (20), which extends over the heterojunction structure (13) between the gate electrode (8) and the drain electrode (12), in electrical contact with the drain electrode (12) and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

Abstract translation: 一种HEMT器件（1），包括：包括异质结结构（13）的半导体主体（15）; 在半导体主体上的介电层（7） 一个栅电极（8）; 漏电极（12），面对栅电极（8）的第一侧（8'）; 和面向与所述栅电极的所述第一侧（8'）相对的第二侧（8“）的源电极（10）;辅助沟道层（20），其在所述异质结结构（13） 电极（8）和漏电极（12），与漏电极（12）电接触并与栅电极隔开一定距离，并形成用于在源电极和漏电极之间流动的电荷载流子的附加导电路径 。