公开(公告)号：WO2006117196A3

公开(公告)日：2006-11-09

申请号：PCT/EP2006/004109

申请日：2006-05-03

Applicant: STMICROELECTRONICS S.R.L. ,  VINCIGUERRA, Vincenzo ,  BEVILACQUA, Maria Fortuna ,  BUONOCORE, Francesco ,  COFFA, Salvatore

Inventor： VINCIGUERRA, Vincenzo ,  BEVILACQUA, Maria Fortuna ,  BUONOCORE, Francesco ,  COFFA, Salvatore

IPC: C01B31/02 ,  H01L21/768

Abstract: Method for growing carbon nanotubes having a determined chirality, comprising the steps of fragmentation of at least one initial carbon nanotube (30) having a determined chirality with obtainment of at least two portions, or seeds, of carbon nanotube, each one having one free growth end (32); supply of atoms of carbon (33) with autocatalyst addition of the atoms of carbon (33) at the free end (32) of each portion of nanotube (30) to determine an elongation, or growth, of the nanotube (30).

公开(公告)号：EP1210752B1

公开(公告)日：2004-11-24

申请号：EP00975849.1

申请日：2000-09-01

Applicant: STMicroelectronics S.r.l.

Inventor： COFFA, Salvatore ,  LIBERTINO, Sebania ,  SAGGIO, Mario ,  FRISINA, Ferruccio

IPC: H01S3/16 ,  H01S5/32

CPC classification number: H01S5/305 ,  H01S3/1603 ,  H01S3/1628 ,  H01S5/3004 ,  H01S5/3068

Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.

公开(公告)号：EP1210752B9

公开(公告)日：2005-08-31

申请号：EP00975849.1

申请日：2000-09-01

Applicant: STMicroelectronics S.r.l.

Inventor： COFFA, Salvatore ,  LIBERTINO, Sebania ,  SAGGIO, Mario ,  FRISINA, Ferruccio

IPC: H01S3/16 ,  H01S5/32

CPC classification number: H01S5/305 ,  H01S3/1603 ,  H01S3/1628 ,  H01S5/3004 ,  H01S5/3068

Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.

公开(公告)号：EP1210752A1

公开(公告)日：2002-06-05

申请号：EP00975849.1

申请日：2000-09-01

Applicant: STMicroelectronics S.r.l.

Inventor： COFFA, Salvatore ,  LIBERTINO, Sebania ,  SAGGIO, Mario ,  FRISINA, Ferruccio

IPC: H01S3/16 ,  H01S5/32

CPC classification number: H01S5/305 ,  H01S3/1603 ,  H01S3/1628 ,  H01S5/3004 ,  H01S5/3068

Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.