公开(公告)号：EP1624462A1

公开(公告)日：2006-02-08

申请号：EP04103714.4

申请日：2004-08-02

Applicant: STMicroelectronics S.r.l.

Inventor： CRIPPA, Luca ,  MICHELONI, Rino

IPC: G11C16/28 ,  G11C16/24 ,  G11C7/06 ,  G11C7/12 ,  G11C11/56

CPC classification number: G11C11/5642 ,  G11C7/12 ,  G11C16/24 ,  G11C16/28

Abstract: A sensing circuit for sensing semiconductor memory cells ( MC,m ), comprising: at least one first circuit branch ( 120a ) adapted to be operatively coupled to a respective memory cell to be sensed, so as to be run through by a current ( I,m ) corresponding to a memory cell state; a feedback-controlled circuit element ( N41a ) in the first circuit branch, for controlling a memory cell access voltage; a current-to-voltage conversion circuit ( N41a ) in the first branch, adapted to convert said current into a correspondent converted voltage signal, indicative of the memory cell state, and at least one comparator ( 125 ) for comparing the converted voltage signal with a comparison voltage, for discriminating among at least two different states of the memory cell. The converted voltage signal corresponds to a control signal of the feedback-controlled circuit element.

Abstract translation: 一种用于感测半导体存储器单元（MC，m）的感测电路，包括：至少一个第一电路分支（120a），适于可操作地耦合到待感测的相应存储单元，以便通过电流（I ，m）对应于存储单元状态; 第一电路支路中的反馈控制电路元件（N41a），用于控制存储单元访问电压; 第一分支中的电流 - 电压转换电路（N41a），用于将表示存储单元状态的所述电流转换为相应的转换电压信号，以及至少一个比较器（125），用于将转换后的电压信号与 比较电压，用于区分存储器单元的至少两个不同状态。 转换后的电压信号对应于反馈控制电路元件的控制信号。

公开(公告)号：EP1591858A1

公开(公告)日：2005-11-02

申请号：EP04101718.7

申请日：2004-04-26

Applicant: STMicroelectronics S.r.l.

Inventor： CRIPPA, Luca ,  SANGALLI, Miriam ,  SCOMMEGNA, Salvatrice ,  MICHELONI, Rino

IPC: G05F3/30

CPC classification number: G11C5/147 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028

Abstract: A trimming structure for trimming functional parameters of an Integrated Circuit - IC - (100) comprising a first (115a) and at least one second functional blocks (115b,...,115n) with which a first (Vrg,a) and at least one second IC functional parameters (Vrg,b,...,Vrg,n) are respectively associated. The trimming structure comprises respective trimmable circuit structures (205a,210a,...,205n,210n) included in the first and at least one second functional blocks, and trimming configuration storage means (110) for storing trimming configurations for the trimmable circuit structures. The trimming configuration storage means are such that a change in the trimming configuration for the trimmable circuit structure of the first functional block causes a corresponding change in the trimming configuration for the trimmable circuit structure of the at least one second functional block. In addition, the trimmable circuit structures are such that a change in the at least one second IC functional parameter in response to the corresponding change in the trimming configuration for the trimmable structure of the at least one second functional block is proportional to the change in the first IC functional parameter consequent to the change in the trimming configuration for the trimmable circuit structure of the first functional block.

Abstract translation: 一种微调结构，用于微调包括第一功能块（115a）和至少一个第二功能块（115b，...，115n）的集成电路-IC-（100）的功能参数，其中第一功能块（Vrg，a） 至少一个第二IC功能参数（Vrg，b，...，Vrg，n）分别相关联。 修剪结构包括第一功能块和至少一个第二功能块中包括的各个可修整电路结构（205a，210a，...，205n，210n），以及修整配置存储装置（110），用于存储可修剪电路结构 。 修整配置存储装置使得第一功能块的可修整电路结构的修整配置的改变引起修整配置的相应改变，用于至少一个第二功能块的可修整电路结构。 此外，所述可调整电路结构使得响应于所述至少一个第二功能块的可调整结构的调整配置的对应改变而改变所述至少一个第二IC功能参数与所述至少一个第二功能参数 第一IC功能参数是由于第一功能块的可微调电路结构的微调配置的变化而引起的。