Protection of output stage transistor of an RF power amplifier
    1.
    发明公开
    Protection of output stage transistor of an RF power amplifier 审中-公开
    Schutzschaltungfüreinen Endstufentransistor eines RF-Leistungsverstärkers

    公开(公告)号:EP1696558A1

    公开(公告)日:2006-08-30

    申请号:EP05425097.2

    申请日:2005-02-25

    Abstract: A novel protection technique and its circuital implementation are presented, which prevent load-mismatch-induced failure in solid-state power amplifiers. In radio- and microwave-frequency power amplifiers, the load voltage standing-wave ratio results in very high voltage peaks at the collector of the final stage (Q 3 ) and may eventually lead to permanent failure of the power transistor due to avalanche breakdown. The proposed solution avoids the risk of breakdown by attenuating the input power to the final stage (Q 3 ) during overvoltage conditions, thus limiting the output collector swing. This is accomplished by means of a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. Indeed, the control loop is unlocked in nominal condition and it acts only when an output mismatching condition is detected. Moreover, a newly proposed control circuit allows a supply-independent collector-clamping threshold to be accurately set.

    Abstract translation: 提出了一种新颖的保护技术及其电路实现,可以防止固态功率放大器的负载失配引起的故障。 在无线电和微波频率功率放大器中,负载电压驻波比导致在最终级(Q 3)的集电极处的非常高的电压峰值,并且可能由于雪崩击穿而最终导致功率晶体管的永久故障。 所提出的解决方案通过在过电压条件下衰减到最终级(Q 3)的输入功率来避免击穿的风险,从而限制输出收集器摆幅。 这通过反馈控制系统来实现,该系统检测输出收集器节点处的峰值电压,并通过改变电路增益将其值钳位到给定的阈值。 实际上,控制回路在标称状态下被解锁,并且仅在检测到输出失配条件时才起作用。 此外,新提出的控制电路允许精确地设定与电源无关的集电极钳位阈值。

    A device for comparing the peak value of at least one voltage signal with a reference voltage
    2.
    发明公开
    A device for comparing the peak value of at least one voltage signal with a reference voltage 有权
    装置,用于至少一个电压的峰值与参考电压

    公开(公告)号:EP1884785A1

    公开(公告)日:2008-02-06

    申请号:EP06425526.8

    申请日:2006-07-25

    CPC classification number: G01R19/04 G01R19/165

    Abstract: A device for comparing the peak value of a periodic voltage signal or of a linear combination of periodic voltage signals (V 1 , V 2 , ..., V N ) with a reference voltage (V REF ) comprises:
    - a reference transconductor element (Gm 0 ) for converting the reference voltage (V REF ) into a reference current (I REF ) ;
    - respective transconductor elements (G m1 , G m2 , ..., G mN ) for converting each of the aforesaid periodic voltage signals (V 1 , V 2 , ..., V N ) into respective periodic current signals (i 1 , i 2 , ..., iN);
    - a current-comparison node (100) for comparing the aforesaid respective periodic current signals (i 1 , i 2 , ..., iN) with the reference current (I REF ), generating a comparison current (i I ) as a difference between the sum of the aforesaid periodic current signals (i 1 , i 2 , ..., iN) and the reference current (I REF );
    - a current rectifier (110) supplied with the comparison current (i I );
    - a hold capacitor (C 0 ) charged with the output current (i 0 ) of the current rectifier (110); and
    - a discharge-current generator (I DIS ) in parallel to said hold capacitor (C 0 ).
    The voltage (V 0 ) across the capacitor indicates of the outcome of the comparison between the peak value of the aforesaid periodic voltage signal or the aforesaid linear combination of periodic voltage signals and the reference voltage (V REF ).

    Abstract translation: 一种用于比较的周期性电压信号或与参考电压(V REF)周期电压信号(V 1,V 2,...,VN)的线性组合的峰值设备包括: - 参考跨导器元件( GM 0)的基准电压(V REF)转换为基准电流(I REF); - respectivement跨导器元件(G M1,G M2,...,G MN)为每个上述的周期电压信号(V 1,V 2,...,VN)的转换成respectivement周期性电流信号(I 1,I 2,...,IN); - 用于比较上述respectivement周期性电流信号(I1,I2,...,IN)与基准电流(I REF),生成比较电流(i I)作为差值电流比较节点(100) 上述周期电流信号(I1,I2,...,IN)和参考电流(IREF)的总和之间; - 与比较电流(i I)供给的电流整流器(110); - 充电电流整流器(110)的输出电流(i 0)的保持电容器(C 0); 和 - 并联的放电电流发生器(I DIS)连接到所述保持电容器(C 0)。 的电压(V 0)跨电容器表示上述周期电压信号的峰值或周期电压信号的前述线性组合和参考电压(V REF)之间的比较的结果。

    High frequency transistor having an impedance transforming network
    3.
    发明公开
    High frequency transistor having an impedance transforming network 审中-公开
    Hochfrequenz晶体管mit Imananztransformationsnetzwerk

    公开(公告)号:EP1617558A1

    公开(公告)日:2006-01-18

    申请号:EP04425518.0

    申请日:2004-07-13

    CPC classification number: H03F3/191 H03F1/565 H03F2200/294 H03F2200/372

    Abstract: A common emitter high frequency amplifier that has a larger gain than that of a classic common emitter amplifier using the same components is disclosed. Moreover, the gain does not depend strongly from the parasitic inductance L E , thus a smaller layout may be used.
    The known common emitter amplifiers tends to maximize the base voltage. By contrast, this amplifier is realized such to maximize the base-emitter voltage for having the largest possible gain. This objective is reached by connecting a matching capacitor between the high frequency input node of the amplifier and the emitter of the transistor.

    Abstract translation: 公开了一种具有比使用相同组件的经典公共发射极放大器增益更大的公共发射极高频放大器。 此外,增益不依赖于寄生电感L E,因此可以使用更小的布局。 已知的共发射极放大器倾向于使基极电压最大化。 相比之下,该放大器被实现为使得具有最大可能增益的基极 - 发射极电压最大化。 通过在放大器的高频输入节点和晶体管的发射极之间连接匹配电容器来实现该目的。

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