公开(公告)号：EP1617558A1

公开(公告)日：2006-01-18

申请号：EP04425518.0

申请日：2004-07-13

Applicant: STMicroelectronics S.r.l.

Inventor： Scuderi, Antonino ,  Carrara, Francesco ,  Palmisano, Giuseppe

IPC: H03F1/14 ,  H03F1/56

CPC classification number: H03F3/191 ,  H03F1/565 ,  H03F2200/294 ,  H03F2200/372

Abstract: A common emitter high frequency amplifier that has a larger gain than that of a classic common emitter amplifier using the same components is disclosed. Moreover, the gain does not depend strongly from the parasitic inductance L E , thus a smaller layout may be used.
The known common emitter amplifiers tends to maximize the base voltage. By contrast, this amplifier is realized such to maximize the base-emitter voltage for having the largest possible gain. This objective is reached by connecting a matching capacitor between the high frequency input node of the amplifier and the emitter of the transistor.

Abstract translation: 公开了一种具有比使用相同组件的经典公共发射极放大器增益更大的公共发射极高频放大器。 此外，增益不依赖于寄生电感L E，因此可以使用更小的布局。 已知的共发射极放大器倾向于使基极电压最大化。 相比之下，该放大器被实现为使得具有最大可能增益的基极 - 发射极电压最大化。 通过在放大器的高频输入节点和晶体管的发射极之间连接匹配电容器来实现该目的。

公开(公告)号：EP2509106A1

公开(公告)日：2012-10-10

申请号：EP12163423.2

申请日：2012-04-05

Applicant: STMicroelectronics S.r.l.

Inventor： Renna, Marco ,  Scuderi, Antonino ,  Magro, Carlo ,  Spina, Nunzio ,  Ragonese, Egidio ,  Marano, Barbaro ,  Palmisano, Giuseppe

IPC: H01L25/065 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/48 ,  H01L23/481 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips (200A,200B) thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements (220A,220B), such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.

Abstract translation: 电路部分的电隔离的耦合是一个堆叠晶片组构的基础上完成的。 半导体芯片（200A，200B），从而可以在任何适当的工艺技术的基础上制造，由此将一个或多个耦合元件（220A，220B）：诸如微变压器的初级或次级线圈，worin的最终特性 微变压器的过程中在晶片接合工艺调整。

公开(公告)号：EP1696558A1

公开(公告)日：2006-08-30

申请号：EP05425097.2

申请日：2005-02-25

Applicant: STMicroelectronics S.r.l.

Inventor： Scuderi, Angelo ,  Scuderi, Antonino ,  La Paglia, Luca ,  Carrara, Francesco ,  Palmisano, Giuseppe

IPC: H03F1/52 ,  H03G3/30 ,  H03F3/189

CPC classification number: H03F1/52 ,  H03F3/19 ,  H03F2200/447 ,  H03F2200/78 ,  H04B1/0466

Abstract: A novel protection technique and its circuital implementation are presented, which prevent load-mismatch-induced failure in solid-state power amplifiers. In radio- and microwave-frequency power amplifiers, the load voltage standing-wave ratio results in very high voltage peaks at the collector of the final stage (Q 3 ) and may eventually lead to permanent failure of the power transistor due to avalanche breakdown. The proposed solution avoids the risk of breakdown by attenuating the input power to the final stage (Q 3 ) during overvoltage conditions, thus limiting the output collector swing. This is accomplished by means of a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. Indeed, the control loop is unlocked in nominal condition and it acts only when an output mismatching condition is detected. Moreover, a newly proposed control circuit allows a supply-independent collector-clamping threshold to be accurately set.

Abstract translation: 提出了一种新颖的保护技术及其电路实现，可以防止固态功率放大器的负载失配引起的故障。 在无线电和微波频率功率放大器中，负载电压驻波比导致在最终级（Q 3）的集电极处的非常高的电压峰值，并且可能由于雪崩击穿而最终导致功率晶体管的永久故障。 所提出的解决方案通过在过电压条件下衰减到最终级（Q 3）的输入功率来避免击穿的风险，从而限制输出收集器摆幅。 这通过反馈控制系统来实现，该系统检测输出收集器节点处的峰值电压，并通过改变电路增益将其值钳位到给定的阈值。 实际上，控制回路在标称状态下被解锁，并且仅在检测到输出失配条件时才起作用。 此外，新提出的控制电路允许精确地设定与电源无关的集电极钳位阈值。

公开(公告)号：EP1557680A1

公开(公告)日：2005-07-27

申请号：EP04425041.3

申请日：2004-01-26

Applicant: STMicroelectronics S.r.l.

Inventor： Cristaudo, Domenico ,  Scuderi, Antonino ,  Palmisano, Giuseppe

IPC: G01R21/10

CPC classification number: G01R21/10

Abstract: The present invention describes a device for detecting the power of a first signal (Vout) at a given frequency. Said device (10) comprises first means (1) suitable for detecting the envelope (Vi) of said first signal (Vout) and second means (2) coupled to said first means (1) and suitable for generating a second signal (Vdet) proportional to the average of the envelope (Vi) detected. The second signal (Vdet) is proportional to the square root of the average power (Poutm) of the first signal (Vout).

Abstract translation: 本发明描述了一种用于在给定频率下检测第一信号（Vout）的功率的装置。 所述装置（10）包括适合于检测所述第一信号（Vout）的包络线（Vi）的第一装置（1）和耦合到所述第一装置（1）并适于产生第二信号（Vdet）的第二装置（2） 与检测到的包络（Vi）的平均值成比例。 第二信号（Vdet）与第一信号（Vout）的平均功率（Poutm）的平方根成比例。