公开(公告)号：EP1017087A1

公开(公告)日：2000-07-05

申请号：EP98830794.8

申请日：1998-12-29

Applicant: STMicroelectronics S.r.l.

Inventor： Brambilla, Claudio ,  Cereda, Sergio Manlio ,  Caprara, Paolo

IPC: H01L21/265 ,  H01L21/8247

CPC classification number: H01L27/11521 ,  Y10S438/976

Abstract: A process for manufacturing a MOS transistor (1) integrated in a semiconductor substrate (2) having a first type of conductivity, which process comprises the steps of:

forming a layer (3) of gate oxide over the semiconductor substrate (2);
forming a gate electrode (4) over this oxide layer;
forming a layer (5) of covering oxide over the gate oxide layer (3), the gate electrode (4), and around the gate electrode (4);
implanting a dopant of a second type of conductivity to provide implanted regions (6,6a,6b) adjacent to the gate electrode;
subjecting the semiconductor to thermal treatments to allow the implanted regions (6,6a,6b) to diffuse into the semiconductor substrate (2) under the gate electrode (4) and form gradual junction drain and source regions of said transistor.

Abstract translation: 一种集成在具有第一类导电性的半导体衬底（2）中的MOS晶体管（1）的制造方法，该工艺包括以下步骤：在半导体衬底（2）上形成栅极氧化物层（3）; 在该氧化物层上形成栅电极（4）; 在所述栅极氧化物层（3），所述栅电极（4）和所述栅电极（4）周围形成覆盖氧化物的层（5）。 注入第二类导电性的掺杂剂以提供与栅电极相邻的注入区域（6,6a，6b）; 对半导体进行热处理以允许注入区域（6,6a，6b）扩散到栅极（4）下方的半导体衬底（2）中，并形成所述晶体管的逐渐结的漏极和源极区域。