Semiconductor memory with access protection scheme
    1.
    发明公开
    Semiconductor memory with access protection scheme 审中-公开
    Halbleiterspeicher mit Zugriffsschutzverfahren

    公开(公告)号:EP1450261A1

    公开(公告)日:2004-08-25

    申请号:EP03425093.6

    申请日:2003-02-18

    CPC classification number: G06F12/1425

    Abstract: A memory, particularly but not limitatively a Flash memory, comprises at least one data storage area (SEC1-SEC4) comprising a plurality of data storage locations (ML1-MLm), and an access circuitry (105,110) for accessing the data storage locations for either retrieving or altering a data content thereof, depending for example on a memory user request. The memory includes at least one first user-configurable flag element and a second user-configurable flag element. Both the at least one first and the second flag elements are used by a user to set a protected state of the respective data storage area against alteration of the content of the data storage locations thereof. The protected state defined by setting the first flag element is user-removable, i . e ., it can be removed by request from the user, so as to enable again the alteration of the content of the data storage area. On the contrary, the protected state defined by setting the second flag element is permanent and, once set, it cannot be removed: the data storage area becomes unalterable.

    Abstract translation: 存储器,特别是但不限于闪存,包括至少一个包括多个数据存储位置(ML1-MLm)的数据存储区域(SEC1-SEC4)和用于访问数据存储位置的访问电路(105,110) 取决于或更改其数据内容,例如根据存储器用户请求。 存储器包括至少一个第一用户可配置标志元件和第二用户可配置标志元件。 所述至少一个第一和第二标志元素都由用户使用以设置相应数据存储区域的受保护状态以防其数据存储位置的内容的改变。 通过设置第一标志元素定义的受保护状态是用户可移除的,即可以通过来自用户的请求去除它,以便再次允许数据存储区域的内容的改变。 相反,通过设置第二标志元素定义的受保护状态是永久的,一旦设置,就不能被去除:数据存储区域变得不可变。

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