公开(公告)号：EP1850369A1

公开(公告)日：2007-10-31

申请号：EP06425283.6

申请日：2006-04-28

Applicant: STMicroelectronics S.r.l.

Inventor： Piumi, Daniele ,  Capetti, Gianfranco ,  Alba, Simone ,  Demuro, Carlo ,  De Simone, Danilo

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308

CPC classification number: H01L21/0271 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088

Abstract: A process for manufacturing an organic mask for the microelectronics industry, including the steps of: forming an organic layer (3) on a substrate (2); forming an inorganic mask (6a) on the organic layer (3); and etching selectively the organic layer (3) through the inorganic mask (6a). Furthermore, the step of forming the inorganic mask (6a) envisages: forming at least a first auxiliary layer (5) of a first inorganic material on the organic layer (3); forming a mask layer (6) of a second inorganic material different from the first inorganic material on the first auxiliary layer (5); and shaping the mask layer (6) by means of a dual-exposure lithographic process.

Abstract translation: 一种制造用于微电子工业的有机掩模的方法，包括以下步骤：在衬底（2）上形成有机层（3）; 在有机层（3）上形成无机掩模（6a）; 并通过无机掩模（6a）选择性地蚀刻有机层（3）。 此外，形成无机掩模（6a）的步骤设想：在有机层（3）上至少形成第一无机材料的第一辅助层（5）; 在所述第一辅助层（5）上形成与所述第一无机材料不同的第二无机材料的掩模层（6）; 以及通过双曝光光刻工艺成形掩模层（6）。