Phase-change memory device with error correction capability
    1.
    发明公开
    Phase-change memory device with error correction capability 审中-公开
    Phasenwechsel-Speichervorrichtung mit Fehlerkorrekturfunktion

    公开(公告)号:EP1947652A1

    公开(公告)日:2008-07-23

    申请号:EP07425569.6

    申请日:2007-09-13

    Abstract: A phase-change memory device includes a plurality of data PCM cells (13), for storing data bits; data decoding circuits (14, 27, 28a), for selectively addressing sets of data PCM cells (13); and data read/program circuits (20a), for reading and programming the selected data PCM cells (13). The device further includes a plurality of parity PCM cells (25), for storing parity bits associated to data bits stored in the data PCM cells (13); parity decoding circuits (14, 27, 28b), for selectively addressing sets of parity PCM cells (25); and parity read/program circuits (20b), for reading and programming the selected parity PCM cells (25).

    Abstract translation: 相变存储器件包括用于存储数据位的多个数据PCM单元(13); 数据解码电路(14,27,28a),用于选择性寻址数据PCM单元(13); 和数据读取/编程电路(20a),用于读取和编程所选择的数据PCM单元(13)。 该装置还包括多个奇偶校验PCM单元(25),用于存储与存储在数据PCM单元(13)中的数据位相关联的奇偶校验位; 奇偶校验解码电路(14,27,28b),用于选择性地寻址奇偶校验PCM单元(25)组; 以及用于读取和编程所选奇偶校验PCM单元(25)的奇偶校验读/写电路(20b)。

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