公开(公告)号：EP1762925A1

公开(公告)日：2007-03-14

申请号：EP05425633.4

申请日：2005-09-09

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Faralli, Dino

IPC: G06F3/033 ,  G01L5/22

CPC classification number: G01L5/223 ,  G06F3/0338 ,  Y10T29/49105 ,  Y10T29/49169

Abstract: In an input device (30), a control element (32) is operated by a user; a pressure sensor (1) is mechanically coupled to the control element (32) and is provided with a monolithic body (2) of semiconductor material housing a first sensitive element (4), which detects an actuation of the control element (32); a supporting element (34) is connected to the pressure sensor (1); and connection elements (38) electrically connect the monolithic body (2) to the supporting element (34) without interposition of a package. In particular, the monolithic body (2) has electrical-contact areas (6) carried by one main surface (2a) thereof, and the printed circuit board (34) has conductive regions (37) carried by a main face (34) thereof; the connection elements (38) are conductive bumps and electrically connect the electrical-contact areas (6) to the conductive regions (37).

Abstract translation: 在输入装置（30），控制元件（32）是由用户操作; 的压力传感器（1）机械地联接到控制元件（32），并设置有一整体式主体半导体材料壳体（2）具有第一敏感元件（4），其在所述控制元件的致动（32）检测; 的支撑元件（34）被连接到所述压力传感器（1）; 和连接部件（38），其电未经封装的插入单块体（2）连接到所述支撑元件（34）。 特别地，所述整体式主体（2）具有电接触区域（6）由一个主表面（2a）中，以及它们的印刷电路板（34）中进行具有由主面（34）中进行的导电区域（37）其 ; 连接元件（38）是导电凸块和电的电接触区域（6）连接到导电区域（37）。

公开(公告)号：EP1684079A1

公开(公告)日：2006-07-26

申请号：EP05425028.7

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor piezoresistive accelerometer (35) includes the steps of: providing a wafer (11) of semiconductor material; providing a membrane (23) in the wafer (11) over a cavity (22); rigidly coupling an inertial mass (25) to the membrane (23); and providing, in the wafer (11), piezoresistive transduction elements (24), that are sensitive to strains of the membrane (23) and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass (25) on top of a surface of the membrane (23) opposite to the cavity (22). The accelerometer (35) is advantageously used in a device for monitoring the pressure (30) of a tyre of a vehicle. The cavity may be formed as a buried cavity. The mass may be formed by silk-screen printing of a metal paste.

Abstract translation: 半导体压阻加速度计（35）的制造工艺包括以下步骤：提供半导体材料的晶片（11）; 在所述晶片（11）上方的空腔（22）上提供膜（23）; 将惯性质量块（25）刚性耦合到膜（23）上; 以及在所述晶片（11）中提供对所述膜（23）的应变敏感的压阻转导元件（24）并产生相应的电信号。 通过在与空腔（22）相对的膜（23）的表面的顶部上形成惯性质量（25）来进行联接的步骤。 加速度计（35）有利地用于监测车辆的轮胎的压力（30）的装置中。 空腔可以形成为掩埋腔。 质量可以通过丝网印刷金属浆料形成。

公开(公告)号：EP2096448A2

公开(公告)日：2009-09-02

申请号：EP09161586.4

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor pressure-monitoring device (30) is disclosed, envisaging: providing a wafer (31) of semiconductor material; providing, in a first region (34a) of the wafer (31) a first buried cavity (22) and a first membrane (23), suspended over, and closing at the top, the first buried cavity (22); providing, in a second region (34b) of the wafer (31), a second buried cavity (40) and a second membrane (41), suspended over, and closing at the top, the second buried cavity (40); coupling an inertial mass (25) in a rigid way to the first membrane (23), by forming the inertial mass (25) on top of a surface of the first membrane (23) opposite to the first buried cavity (22); providing, in the first membrane (23), first piezoresistive transduction elements (24) sensitive to strains of the first membrane (23) due to movements of the inertial mass (25) in response to a sensed acceleration and generating corresponding electrical signals, so as to provide an acceleration sensor (35); and providing, in the second membrane (41), second piezoresistive transduction elements (42) sensitive to strains of the second membrane (41) in response to a sensed pressure and generating corresponding electrical signals, so as to provide a pressure sensor (36) integrated with the acceleration sensor (35) in the wafer (31). A semiconductor pressure-monitoring device (30) is also disclosed, made with the above manufacturing process.

Abstract translation: 半导体组合的加速度计和压力监控装置的制造过程（30）游离缺失盘，着的正视：提供半导体材料的晶片（31）; 提供，在晶片的第一区域（34A）（31）的第一掩埋空腔（22），并悬浮在，并且在顶部闭合的第一膜（23），所述第一掩埋空腔（22）; 提供，在第二区域（34B）的晶片（31），第二掩埋空腔（40），并悬浮在，并且在顶部闭合第二膜（41），所述第二掩埋空腔（40）; 耦合到在刚性方式惯性质量（25）到所述第一膜（23）通过在第一膜的表面的顶部上形成惯性质量（25）（23）相对于该第一掩埋空腔（22）; 提供，在所述第一膜（23），第一压阻转换元件（24）到所述第一膜（23）的敏感的菌株由于响应于感测到的加速度的惯性质量（25）的运动和产生相应的电信号，从而 以提供到加速度传感器（35）; 和提供，在第二膜（41），第二压阻转换元件（42），以响应于感测到的压力和产生所述第二膜（41）的菌株相应的电信号，以提供一个压力传感器敏感（36） 与在晶片（31）加速度传感器（35）集成在一起。 一种组合半导体加速度计和压力监控装置（30）是这样游离缺失盘，与上述制造方法制得。

公开(公告)号：EP1684079A9

公开(公告)日：2006-10-25

申请号：EP05425028.7

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor piezoresistive accelerometer (35) includes the steps of: providing a wafer (11) of semiconductor material; providing a membrane (23) in the wafer (11) over a cavity (22); rigidly coupling an inertial mass (25) to the membrane (23); and providing, in the wafer (11), piezoresistive transduction elements (24), that are sensitive to strains of the membrane (23) and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass (25) on top of a surface of the membrane (23) opposite to the cavity (22). The accelerometer (35) is advantageously used in a device for monitoring the pressure (30) of a tyre of a vehicle. The cavity may be formed as a buried cavity. The mass may be formed by silk-screen printing of a metal paste.

公开(公告)号：EP2096448A3

公开(公告)日：2012-04-04

申请号：EP09161586.4

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08 ,  G01P15/18

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a combined semiconductor accelerometer and pressure-monitoring device (30) is disclosed, envisaging: providing a wafer (31) of semiconductor material; providing, in a first region (34a) of the wafer (31) a first buried cavity (22) and a first membrane (23), suspended over, and closing at the top, the first buried cavity (22); providing, in a second region (34b) of the wafer (31), a second buried cavity (40) and a second membrane (41), suspended over, and closing at the top, the second buried cavity (40); coupling an inertial mass (25) in a rigid way to the first membrane (23), by forming the inertial mass (25) on top of a surface of the first membrane (23) opposite to the first buried cavity (22); providing, in the first membrane (23), first piezoresistive transduction elements (24) sensitive to strains of the first membrane (23) due to movements of the inertial mass (25) in response to a sensed acceleration and generating corresponding electrical signals, so as to provide an acceleration sensor (35); and providing, in the second membrane (41), second piezoresistive transduction elements (42) sensitive to strains of the second membrane (41) in response to a sensed pressure and generating corresponding electrical signals, so as to provide a pressure sensor (36) integrated with the acceleration sensor (35) in the wafer (31). A combined semiconductor accelerometer and pressure-monitoring device (30) is also disclosed, made with the above manufacturing process.