公开(公告)号：EP1635399A1

公开(公告)日：2006-03-15

申请号：EP04425671.7

申请日：2004-09-08

Applicant: STMicroelectronics S.r.l.

Inventor： Santangelo, Antonello ,  Cascino, Salvatore ,  Gervasi, Leonardo

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/41

CPC classification number: H01L29/7835 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/66659

Abstract: A lateral MOS device (1) is formed in a body (2) having a surface (7) and is formed by a semiconductor layer (40) of a first conductivity type; a drain region (10, 11) of a second conductivity type, formed in the semiconductor layer (40) and facing the surface (7); a source region (13) of the second conductivity type, formed in the semiconductor layer (40) and facing the surface (7); a channel (15) of the first conductivity type, formed in the semiconductor layer (40) between the drain region (10, 11) and the source region (13) and facing the surface (7); and an insulated gate region (20-22), formed on top of the surface (7) over the channel region (15). In order to improve the dynamic performance, a conductive region (23) extends only on one side of the insulated gate region (20-22), on top of the drain region (10, 11) but not on top of the insulated gate region.

Abstract translation: 横向MOS器件（1）形成在具有表面（7）的主体（2）中并且由第一导电类型的半导体层（40）形成; 形成在所述半导体层（40）中且面向所述表面（7）的第二导电类型的漏区（10,11）; 形成在所述半导体层（40）中并面向所述表面（7）的所述第二导电类型的源极区域（13）; 在所述漏极区域（10）和所述源极区域（13）之间的所述半导体层（40）中形成并面对所述表面（7）的第一导电类型的沟道（15）。 以及形成在通道区域（15）上方的表面（7）的顶部上的绝缘栅极区域（20-22）。 为了改善动态性能，导电区域（23）仅在绝缘栅极区域（20-22）的一侧上延伸，在漏极区域（10,11）的顶部上延伸，而不在绝缘栅极区域的顶部 。