公开(公告)号：EP0993053A1

公开(公告)日：2000-04-12

申请号：EP98830592.6

申请日：1998-10-09

Applicant: STMicroelectronics S.r.l.

Inventor： Polman, Albert ,  Hamelin, Nicholas ,  Kik, Peter ,  Coffa, Salvatore ,  Frisina, Ferruccio ,  Saggio, Mario

IPC: H01L31/108 ,  H01L31/0288 ,  G02B6/42

CPC classification number: G02B6/12004 ,  H01L31/0352 ,  H01L31/103

Abstract: The infrared detector device (1) comprises a PN junction (9, 10) formed by a first semiconductor material region (9) doped with rare earth ions and by a second semiconductor material region (10) of opposite doping type (P). The detector device comprises a waveguide (8) formed by a projecting structure (6) extending on a substrate (2) including a reflecting layer (4) and laterally delimited by a protection and containment oxide region (11). At least one portion of the waveguide (8) is formed by the PN junction and has an end fed with light to be detected. The detector device (1) has electrodes (18, 13) disposed laterally to and on the waveguide (8) to allow an efficient gathering of charge carriers generated by photoconversion.

Abstract translation: 红外线检测器装置（1）包括由第一半导体材料区域而形成的PN结（9，10）（9）掺杂有稀土离子和由相反的掺杂类型（P）的第二半导体材料区（10）。 该检测器装置包括一个波导（8）由形成突出结构（6）延伸的基板上（2）包括反射层（4）和晚期反弹由保护和容纳氧化物区（11）分隔。 在波导的至少一个部分（8）是由PN结形成并且具有端馈送有被检测光。 所述检测器装置（1）具有电极（18，13），其设置尾盘反弹并在波导（8），以允许在由光转换产生的载流子收集效率。