Readout-interface circuit for a capacitive microelectromechanical sensor, and corresponding sensor
    1.
    发明公开
    Readout-interface circuit for a capacitive microelectromechanical sensor, and corresponding sensor 审中-公开
    电路Ableseschnittstelle用于电容微机电传感器和相应的传感器

    公开(公告)号:EP1988366A1

    公开(公告)日:2008-11-05

    申请号:EP07425256.0

    申请日:2007-04-30

    CPC classification number: G01D5/24 B06B1/0292 G01L9/0073 G01P1/023 G01P15/125

    Abstract: In a capacitive sensor (10), a detection structure (11), of a microelectromechanical type, is provided with a fixed element (4) and a mobile element (5), capacitively coupled to one another, generating a capacitive variation (ΔC m ) as a function of a quantity to be detected, and with a parasitic coupling element (2), capacitively coupled to at least one between the mobile element (5) and the fixed element (4) generating a first parasitic capacitance (27; 28), intrinsic to the detection structure (11); a readout-interface circuit (12) is connected to the detection structure (11) and generates, on an output terminal (23) thereof, an output signal (V out ) as a function of the capacitive variation (ΔC m ). The readout-interface circuit (12) has a feedback path (29) between the output terminal (23) and the parasitic coupling element (2) so as to drive the first intrinsic parasitic capacitance (27; 28) with the output signal (V out ).

    Abstract translation: 在电容传感器(10),微机电型的检测结构(11),被提供有固定元件(4)和移动元件(5),电容性地耦合到彼此,生成的电容的变化(“C 米),为量的函数被检测,和带有寄生耦合元件(2),电容的可移动元件(5)和所述固定元件(4)产生第一寄生电容(27之间耦合到至少一个; 28)固有的检测结构(11); 的读出接口电路(12)被连接到所述检测结构(11)和基因的价格,到输出端子(23)上,以输出信号(V OUT)作为电容变化(“C米)的函数。 所读出的接口电路(12)具有输出端(23)和所述寄生耦合元件(2)之间的反馈路径(29),以便驱动所述第一本征寄生电容(27; 28)与所述输出信号(V 出)。

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